Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor

Jae Seung Lee, Jong Wook Kim, Doo Chan Jung, Chang Seok Kim, Won Sang Lee, Jae Hak Lee, Jin Ho Shin, Moo Whan Shin, Jae Eung Oh, Jung Hee Lee

Research output: Contribution to journalLetter

12 Citations (Scopus)

Abstract

This is the first report on wet gate recess etching for the fabrication of an Al 0.2 Ga 0.8 N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The recessetched surface was smooth and had no etch pits. After recess etching of a 300-Å-thick n + -GaN cap layer, Schottky contact metals of Pt/Au were deposited on Al 0.2 Ga 0.8 N. Gate-to-drain breakdown voltage and gate leakage current at V GD = -20 V were -80 V and -34 μA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 A
Publication statusPublished - 2001 Mar 1

Fingerprint

recesses
High electron mobility transistors
Etching
field effect transistors
etching
Fabrication
fabrication
Wet etching
Drain current
Transconductance
Photoresists
Field effect transistors
Metals
Electric breakdown
Leakage currents
Heterojunctions
Masks
transconductance
electrical faults
photoresists

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Lee, Jae Seung ; Kim, Jong Wook ; Jung, Doo Chan ; Kim, Chang Seok ; Lee, Won Sang ; Lee, Jae Hak ; Shin, Jin Ho ; Shin, Moo Whan ; Oh, Jae Eung ; Lee, Jung Hee. / Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor. In: Japanese Journal of Applied Physics, Part 2: Letters. 2001 ; Vol. 40, No. 3 A.
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title = "Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor",
abstract = "This is the first report on wet gate recess etching for the fabrication of an Al 0.2 Ga 0.8 N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The recessetched surface was smooth and had no etch pits. After recess etching of a 300-{\AA}-thick n + -GaN cap layer, Schottky contact metals of Pt/Au were deposited on Al 0.2 Ga 0.8 N. Gate-to-drain breakdown voltage and gate leakage current at V GD = -20 V were -80 V and -34 μA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.",
author = "Lee, {Jae Seung} and Kim, {Jong Wook} and Jung, {Doo Chan} and Kim, {Chang Seok} and Lee, {Won Sang} and Lee, {Jae Hak} and Shin, {Jin Ho} and Shin, {Moo Whan} and Oh, {Jae Eung} and Lee, {Jung Hee}",
year = "2001",
month = "3",
day = "1",
language = "English",
volume = "40",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
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Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor. / Lee, Jae Seung; Kim, Jong Wook; Jung, Doo Chan; Kim, Chang Seok; Lee, Won Sang; Lee, Jae Hak; Shin, Jin Ho; Shin, Moo Whan; Oh, Jae Eung; Lee, Jung Hee.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 3 A, 01.03.2001.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor

AU - Lee, Jae Seung

AU - Kim, Jong Wook

AU - Jung, Doo Chan

AU - Kim, Chang Seok

AU - Lee, Won Sang

AU - Lee, Jae Hak

AU - Shin, Jin Ho

AU - Shin, Moo Whan

AU - Oh, Jae Eung

AU - Lee, Jung Hee

PY - 2001/3/1

Y1 - 2001/3/1

N2 - This is the first report on wet gate recess etching for the fabrication of an Al 0.2 Ga 0.8 N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The recessetched surface was smooth and had no etch pits. After recess etching of a 300-Å-thick n + -GaN cap layer, Schottky contact metals of Pt/Au were deposited on Al 0.2 Ga 0.8 N. Gate-to-drain breakdown voltage and gate leakage current at V GD = -20 V were -80 V and -34 μA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.

AB - This is the first report on wet gate recess etching for the fabrication of an Al 0.2 Ga 0.8 N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The recessetched surface was smooth and had no etch pits. After recess etching of a 300-Å-thick n + -GaN cap layer, Schottky contact metals of Pt/Au were deposited on Al 0.2 Ga 0.8 N. Gate-to-drain breakdown voltage and gate leakage current at V GD = -20 V were -80 V and -34 μA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.

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M3 - Letter

VL - 40

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -