Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor

Jae Seung Lee, Jong Wook Kim, Doo Chan Jung, Chang Seok Kim, Won Sang Lee, Jae Hak Lee, Jin Ho Shin, Moo Whan Shin, Jae Eung Oh, Jung Hee Lee

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14 Citations (Scopus)

Abstract

This is the first report on wet gate recess etching for the fabrication of an Al0.2Ga0.8N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The recessetched surface was smooth and had no etch pits. After recess etching of a 300-Å-thick n+-GaN cap layer, Schottky contact metals of Pt/Au were deposited on Al0.2Ga0.8N. Gate-to-drain breakdown voltage and gate leakage current at VGD = -20 V were -80 V and -34 μA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.

Original languageEnglish
Pages (from-to)L198-L200
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 A
DOIs
Publication statusPublished - 2001 Mar 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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