We demonstrate photo-patternable ion gel-gated graphene transistors and inverters on plastic substrates. The photo-patternable ion gel can be used as a negative photoresist for the patterning of underlying graphene as well as gate dielectrics. As a result, an extra graphene-patterning step is not required, which simplifies the device fabrication and avoids a side effect arising from the photoresist residue. The high capacitance of ion gel gate dielectrics yielded a low voltage operation (∼2 V) of the graphene transistor and inverter. The graphene transistors on plastic showed an on/off-current ratio of ∼11.5, along with hole and electron mobilities of 852 ± 124 and 452 ± 98 cm2 V-1 s-1, respectively. In addition, the flexible graphene inverter was successfully fabricated on plastic through the potential superposition effect from the drain bias. These devices show excellent mechanical flexibility and fatigue stability.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering