Abstract
The interplay between free and bound charges in two-dimensional (2D) semiconductor/ferroelectric oxide structures is responsible for the unique opto-electrical properties of these structures. In this study, we vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type) with a ferroelectric oxide (PbTiO3) and found that a ferroelectric polarization induced accumulation or depletion in the layered materials. The heterostructures exhibited polarization-dependent charge distribution and pinched hysteresis. We show that polarization at the interface promoted efficient charge separation of photo-generated carriers in the 2D layers. Optical control of electrical transport was effectively achieved in the MoS2 layers. This study potentially opens up new applications for semiconductor/ferroelectric systems in electronic devices.
Original language | English |
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Pages (from-to) | 3724-3729 |
Number of pages | 6 |
Journal | Journal of Materials Chemistry C |
Volume | 8 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2020 Mar 21 |
Bibliographical note
Funding Information:This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2018R1A2B2003607 and 2016R1D1A1B01009032) and the Ministry of Education (NRF-2018R1A6A1A03025340).
Publisher Copyright:
© 2020 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry