Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs

Jong Tae Lim, Joong-Gill Choi, Yong Hwan Bak, Seung Han Park, Ung Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.

Original languageEnglish
Pages (from-to)608-612
Number of pages5
JournalJournal of the Korean Physical Society
Volume31
Issue number4
Publication statusPublished - 1997 Dec 1

Fingerprint

thermodynamic properties
heat
photoacoustic spectroscopy
curve fitting
thermal diffusivity
diffusion coefficient
relaxation time
low frequencies

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{9655222383324fefa6c464961a1234e4,
title = "Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs",
abstract = "The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.",
author = "Lim, {Jong Tae} and Joong-Gill Choi and Bak, {Yong Hwan} and Park, {Seung Han} and Ung Kim",
year = "1997",
month = "12",
day = "1",
language = "English",
volume = "31",
pages = "608--612",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs. / Lim, Jong Tae; Choi, Joong-Gill; Bak, Yong Hwan; Park, Seung Han; Kim, Ung.

In: Journal of the Korean Physical Society, Vol. 31, No. 4, 01.12.1997, p. 608-612.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs

AU - Lim, Jong Tae

AU - Choi, Joong-Gill

AU - Bak, Yong Hwan

AU - Park, Seung Han

AU - Kim, Ung

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.

AB - The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.

UR - http://www.scopus.com/inward/record.url?scp=0031520742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031520742&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031520742

VL - 31

SP - 608

EP - 612

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -