Abstract
The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.
| Original language | English |
|---|---|
| Pages (from-to) | 608-612 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 31 |
| Issue number | 4 |
| Publication status | Published - 1997 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs. / Lim, Jong Tae; Choi, Joong-Gill; Bak, Yong Hwan; Park, Seung Han; Kim, Ung.
In: Journal of the Korean Physical Society, Vol. 31, No. 4, 01.12.1997, p. 608-612.Research output: Contribution to journal › Article
TY - JOUR
T1 - Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs
AU - Lim, Jong Tae
AU - Choi, Joong-Gill
AU - Bak, Yong Hwan
AU - Park, Seung Han
AU - Kim, Ung
PY - 1997/12/1
Y1 - 1997/12/1
N2 - The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.
AB - The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.
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M3 - Article
AN - SCOPUS:0031520742
VL - 31
SP - 608
EP - 612
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 4
ER -