TY - JOUR
T1 - Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs
AU - Lim, Jong Tae
AU - Choi, Joong Gill
AU - Bak, Yong Hwan
AU - Park, Seung Han
AU - Kim, Ung
PY - 1997
Y1 - 1997
N2 - The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.
AB - The carrier-transport processes and the thermal properties of n-type GaAs were investigated by using photoacoustic spectroscopy. The frequency dependence of the photoacoustic signal showed that the photoacoustic effects in n-type GaAs were associated with instantaneous thermalization, nonradiative bulk recombination, and nonradiative surface recombination. In particular, it was found that in the high-frequency region the heat was primarily generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. For the low-frequency region, however, the instantaneous thermalization process was the main origin of the heat. A thermal diffusivity of 0.51 cm 2/s, a diffusion coefficient of 5.2 cm 2/s, a surface recombination velocity of 355 cm/s, and a relaxation time of 5.8 μs were also obtained from the curve fitting of the photoacoustic phase spectrum.
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M3 - Article
AN - SCOPUS:0031520742
VL - 31
SP - 608
EP - 612
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 4
ER -