The photodetecting properties of ZnO-based thin-film transistors (TFT) was studied at room temperature. The transistors were fabricated on a SiO 2/p-Si substrate by rf magnetron sputtering. The TFTs displayed high photocurrent of more than 10 μA, when illuminated by ultraviolet (UV) and visible photons with energy higher than 2.3eV. The results show that in the channel depletion state with gate bias of -30 V, the photodetecting sensitivity becomes much higher than in the accumulation state.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)