Photodetecting properties of ZnO-based thin-film transistors

H. S. Bae, M. H. Yoon, J. H. Kim, Seongil Im

Research output: Contribution to journalArticle

161 Citations (Scopus)

Abstract

The photodetecting properties of ZnO-based thin-film transistors (TFT) was studied at room temperature. The transistors were fabricated on a SiO 2/p-Si substrate by rf magnetron sputtering. The TFTs displayed high photocurrent of more than 10 μA, when illuminated by ultraviolet (UV) and visible photons with energy higher than 2.3eV. The results show that in the channel depletion state with gate bias of -30 V, the photodetecting sensitivity becomes much higher than in the accumulation state.

Original languageEnglish
Pages (from-to)5313-5315
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
Publication statusPublished - 2003 Dec 22

Fingerprint

transistors
thin films
photocurrents
magnetron sputtering
depletion
sensitivity
photons
room temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Bae, H. S. ; Yoon, M. H. ; Kim, J. H. ; Im, Seongil. / Photodetecting properties of ZnO-based thin-film transistors. In: Applied Physics Letters. 2003 ; Vol. 83, No. 25. pp. 5313-5315.
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Photodetecting properties of ZnO-based thin-film transistors. / Bae, H. S.; Yoon, M. H.; Kim, J. H.; Im, Seongil.

In: Applied Physics Letters, Vol. 83, No. 25, 22.12.2003, p. 5313-5315.

Research output: Contribution to journalArticle

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