Photoeffects in WO3/GaAs electrode

Ki Hyun Yoon, Jeong Won Lee, Yong Soo Cho, Dong Heon Kang

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Abstract

Photoeffects of a p-type GaAs coated with WO3 thin film have been investigated as a function of film thickness and photoresponse transients of the WO3/GaAs electrode were studied. Also, these results were compared to those for a single p-type GaAs electrode. The photocurrent of the WO3/GaAs electrode depended on the film thickness of the WO3, showing an optimum photon efficiency for specimens of 800 Å thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates earner movement. For an 800-Å-thick WO3 thin film deposited p-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single p-type GaAs, which was confirmed as a result of transient behavior. I-V and C-V characteristics of the WO3/GaAs electrode were also compared with those of a single p-type GaAs electrode.

Original languageEnglish
Pages (from-to)6813-6818
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number12
DOIs
Publication statusPublished - 1996 Dec 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Yoon, K. H., Lee, J. W., Cho, Y. S., & Kang, D. H. (1996). Photoeffects in WO3/GaAs electrode. Journal of Applied Physics, 80(12), 6813-6818. https://doi.org/10.1063/1.363810