The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 °C are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature.
Bibliographical noteFunding Information:
The authors acknowledge the support from Korea Institute of Industrial Technology Evaluation and Planning, Grant No. A00-A04-2208-05, and the partial support from the Brain Korea 21 Program. Jae H. Kim was supported by the electron Spin Science Center at POSTECH, one of the science research centers (SRC) funded by the Korea Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry