Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation

S. S. Kim, S. P. Park, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 °C are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

Fingerprint

Thermal evaporation
Diodes
Optical properties
diodes
evaporation
optical properties
Photoelectricity
photoelectric effect
Dark currents
room temperature
dark current
Temperature
Electron energy levels
leakage
energy levels
pentacene
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{6fad5bb3baac44b18e0326c39ae3fbb0,
title = "Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation",
abstract = "The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 °C are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature.",
author = "Kim, {S. S.} and Park, {S. P.} and Kim, {Jae Hoon} and Seongil Im",
year = "2002",
month = "12",
day = "2",
doi = "10.1016/S0040-6090(02)00653-3",
language = "English",
volume = "420-421",
pages = "19--22",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation. / Kim, S. S.; Park, S. P.; Kim, Jae Hoon; Im, Seongil.

In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 19-22.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation

AU - Kim, S. S.

AU - Park, S. P.

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2002/12/2

Y1 - 2002/12/2

N2 - The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 °C are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature.

AB - The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 °C are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature.

UR - http://www.scopus.com/inward/record.url?scp=17744411317&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17744411317&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00653-3

DO - 10.1016/S0040-6090(02)00653-3

M3 - Article

VL - 420-421

SP - 19

EP - 22

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -