Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation

S. S. Kim, S. P. Park, J. H. Kim, S. Im

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The optical and photoelectric properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 60 and 80 °C are investigated. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoelectric effects were well observed from p-pentacene/n-Si diodes, which showed a maximum photoresponsivity of 3.87 A/W under a monochromatic red light of 1.85 eV (670 nm) at 5 V reverse bias. All the diodes exhibited typical rectifying behavior but a higher dark current leakage level was observed from the p-pentacene/n-Si diodes prepared at a higher deposition temperature.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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