Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

Syed Raza Ali Raza, Young Tack Lee, Youn Gyoung Chang, Pyo Jin Jeon, Jae Hoon Kim, Ryong Ha, Heon-Jin Choi, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

Original languageEnglish
Pages (from-to)2660-2664
Number of pages5
JournalPhysical Chemistry Chemical Physics
Volume15
Issue number8
DOIs
Publication statusPublished - 2013 Feb 28

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Field effect transistors
Nanowires
nanowires
field effect transistors
traps
Photons
Gates (transistor)
photon beams
Conduction bands
luminaires
conduction bands
signatures
Glass
glass
photons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Raza, Syed Raza Ali ; Lee, Young Tack ; Chang, Youn Gyoung ; Jeon, Pyo Jin ; Kim, Jae Hoon ; Ha, Ryong ; Choi, Heon-Jin ; Im, Seongil. / Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors. In: Physical Chemistry Chemical Physics. 2013 ; Vol. 15, No. 8. pp. 2660-2664.
@article{3c277c95610d468da931ab0c6776d9ea,
title = "Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors",
abstract = "We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.",
author = "Raza, {Syed Raza Ali} and Lee, {Young Tack} and Chang, {Youn Gyoung} and Jeon, {Pyo Jin} and Kim, {Jae Hoon} and Ryong Ha and Heon-Jin Choi and Seongil Im",
year = "2013",
month = "2",
day = "28",
doi = "10.1039/c3cp44027c",
language = "English",
volume = "15",
pages = "2660--2664",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "8",

}

Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors. / Raza, Syed Raza Ali; Lee, Young Tack; Chang, Youn Gyoung; Jeon, Pyo Jin; Kim, Jae Hoon; Ha, Ryong; Choi, Heon-Jin; Im, Seongil.

In: Physical Chemistry Chemical Physics, Vol. 15, No. 8, 28.02.2013, p. 2660-2664.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

AU - Raza, Syed Raza Ali

AU - Lee, Young Tack

AU - Chang, Youn Gyoung

AU - Jeon, Pyo Jin

AU - Kim, Jae Hoon

AU - Ha, Ryong

AU - Choi, Heon-Jin

AU - Im, Seongil

PY - 2013/2/28

Y1 - 2013/2/28

N2 - We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

AB - We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

UR - http://www.scopus.com/inward/record.url?scp=84873293596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873293596&partnerID=8YFLogxK

U2 - 10.1039/c3cp44027c

DO - 10.1039/c3cp44027c

M3 - Article

C2 - 23340850

AN - SCOPUS:84873293596

VL - 15

SP - 2660

EP - 2664

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 8

ER -