Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

Syed Raza Ali Raza, Young Tack Lee, Youn Gyoung Chang, Pyo Jin Jeon, Jae Hoon Kim, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)


We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

Original languageEnglish
Pages (from-to)2660-2664
Number of pages5
JournalPhysical Chemistry Chemical Physics
Issue number8
Publication statusPublished - 2013 Feb 28


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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