Photoelectric, stoichiometric and structural properties of n-ZnO film on p-Si

H. Y. Kim, Jae Hoon Kim, M. O. Park, Seongil Im

Research output: Contribution to journalConference article

22 Citations (Scopus)

Abstract

n-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. Substrate temperatures of 300, 400, 500 and 600°C were used for the n-ZnO film deposition using various Ar/O2 ratios from 1:1 to 6:1. All the diodes, except for one obtained at a high substrate temperature of 600°C, show strong rectifying behavior as characterized by current-voltage (I-V) measurement in a dark room. Photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. High levels of photocurrent or responsivity were obtained under reverse bias conditions when the stoichiometry of n-ZnO films was improved by optimizing the process conditions, such as the substrate temperature and Ar/O2 ratio. The n-ZnO/p-Si structure prepared at 300°C was found to be unsuitable because photoelectric effects were not apparent from this structure. A heterojunction diode with n-ZnO deposited at 600°C was also found to be unsuitable because the dark leakage current was too high, even though the diode showed photoelectric effects.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalThin Solid Films
Volume398-399
DOIs
Publication statusPublished - 2001 Nov 1
Event28th International Conference on Metallurgia - San Diego,CA, United States
Duration: 2001 Apr 302001 May 30

Fingerprint

Photoelectricity
photoelectric effect
Structural properties
Diodes
diodes
Substrates
Heterojunctions
heterojunctions
Sputter deposition
Photodiodes
Photocurrents
Stoichiometry
Leakage currents
Temperature
rooms
photodiodes
temperature
photocurrents
stoichiometry
leakage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Photoelectric, stoichiometric and structural properties of n-ZnO film on p-Si",
abstract = "n-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. Substrate temperatures of 300, 400, 500 and 600°C were used for the n-ZnO film deposition using various Ar/O2 ratios from 1:1 to 6:1. All the diodes, except for one obtained at a high substrate temperature of 600°C, show strong rectifying behavior as characterized by current-voltage (I-V) measurement in a dark room. Photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. High levels of photocurrent or responsivity were obtained under reverse bias conditions when the stoichiometry of n-ZnO films was improved by optimizing the process conditions, such as the substrate temperature and Ar/O2 ratio. The n-ZnO/p-Si structure prepared at 300°C was found to be unsuitable because photoelectric effects were not apparent from this structure. A heterojunction diode with n-ZnO deposited at 600°C was also found to be unsuitable because the dark leakage current was too high, even though the diode showed photoelectric effects.",
author = "Kim, {H. Y.} and Kim, {Jae Hoon} and Park, {M. O.} and Seongil Im",
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Photoelectric, stoichiometric and structural properties of n-ZnO film on p-Si. / Kim, H. Y.; Kim, Jae Hoon; Park, M. O.; Im, Seongil.

In: Thin Solid Films, Vol. 398-399, 01.11.2001, p. 93-98.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Photoelectric, stoichiometric and structural properties of n-ZnO film on p-Si

AU - Kim, H. Y.

AU - Kim, Jae Hoon

AU - Park, M. O.

AU - Im, Seongil

PY - 2001/11/1

Y1 - 2001/11/1

N2 - n-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. Substrate temperatures of 300, 400, 500 and 600°C were used for the n-ZnO film deposition using various Ar/O2 ratios from 1:1 to 6:1. All the diodes, except for one obtained at a high substrate temperature of 600°C, show strong rectifying behavior as characterized by current-voltage (I-V) measurement in a dark room. Photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. High levels of photocurrent or responsivity were obtained under reverse bias conditions when the stoichiometry of n-ZnO films was improved by optimizing the process conditions, such as the substrate temperature and Ar/O2 ratio. The n-ZnO/p-Si structure prepared at 300°C was found to be unsuitable because photoelectric effects were not apparent from this structure. A heterojunction diode with n-ZnO deposited at 600°C was also found to be unsuitable because the dark leakage current was too high, even though the diode showed photoelectric effects.

AB - n-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. Substrate temperatures of 300, 400, 500 and 600°C were used for the n-ZnO film deposition using various Ar/O2 ratios from 1:1 to 6:1. All the diodes, except for one obtained at a high substrate temperature of 600°C, show strong rectifying behavior as characterized by current-voltage (I-V) measurement in a dark room. Photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. High levels of photocurrent or responsivity were obtained under reverse bias conditions when the stoichiometry of n-ZnO films was improved by optimizing the process conditions, such as the substrate temperature and Ar/O2 ratio. The n-ZnO/p-Si structure prepared at 300°C was found to be unsuitable because photoelectric effects were not apparent from this structure. A heterojunction diode with n-ZnO deposited at 600°C was also found to be unsuitable because the dark leakage current was too high, even though the diode showed photoelectric effects.

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