TY - GEN
T1 - Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes
AU - Song, Jung Gyun
AU - Shin, Moo Whan
N1 - Publisher Copyright:
© (2002) Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2002
Y1 - 2002
N2 - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.
AB - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.
UR - http://www.scopus.com/inward/record.url?scp=0036432407&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036432407&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.389-393.957
DO - 10.4028/www.scientific.net/MSF.389-393.957
M3 - Conference contribution
AN - SCOPUS:0036432407
SN - 9780878498949
T3 - Materials Science Forum
SP - 957
EP - 960
BT - Silicon Carbide and Related Materials 2001
A2 - Yoshida, S.
A2 - Nishino, S.
A2 - Harima, H.
A2 - Kimoto, T.
PB - Trans Tech Publications Ltd
T2 - International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Y2 - 28 October 2001 through 2 November 2001
ER -