Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes

Jung Gyun Song, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsH. Harima, T. Kimoto, S. Nishino, S. Yoshida
PublisherTrans Tech Publications Ltd
Pages957-960
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - 2002 Jan 1
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: 2001 Oct 282001 Nov 2

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period01/10/2801/11/2

Fingerprint

Electrolytes
Etching
etching
electrolytes
wafers
Wet etching
Photoresists
Ultraviolet radiation
Masks
photoresists
Surface roughness
roughness
masks
Wavelength
wavelengths

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Song, J. G., & Shin, M. W. (2002). Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes. In H. Harima, T. Kimoto, S. Nishino, & S. Yoshida (Eds.), Silicon Carbide and Related Materials 2001 (pp. 957-960). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.957
Song, Jung Gyun ; Shin, Moo Whan. / Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes. Silicon Carbide and Related Materials 2001. editor / H. Harima ; T. Kimoto ; S. Nishino ; S. Yoshida. Trans Tech Publications Ltd, 2002. pp. 957-960 (Materials Science Forum).
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abstract = "In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27{\AA}. An attempt was made to employ a photoresist as a mask for patterning.",
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Song, JG & Shin, MW 2002, Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes. in H Harima, T Kimoto, S Nishino & S Yoshida (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 957-960, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 01/10/28. https://doi.org/10.4028/www.scientific.net/MSF.389-393.957

Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes. / Song, Jung Gyun; Shin, Moo Whan.

Silicon Carbide and Related Materials 2001. ed. / H. Harima; T. Kimoto; S. Nishino; S. Yoshida. Trans Tech Publications Ltd, 2002. p. 957-960 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.

AB - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.

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Song JG, Shin MW. Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes. In Harima H, Kimoto T, Nishino S, Yoshida S, editors, Silicon Carbide and Related Materials 2001. Trans Tech Publications Ltd. 2002. p. 957-960. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.389-393.957