Abstract
In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2001 |
| Editors | H. Harima, T. Kimoto, S. Nishino, S. Yoshida |
| Publisher | Trans Tech Publications Ltd |
| Pages | 957-960 |
| Number of pages | 4 |
| ISBN (Print) | 9780878498949 |
| DOIs | |
| Publication status | Published - 2002 Jan 1 |
| Event | International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: 2001 Oct 28 → 2001 Nov 2 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 389-393 |
| ISSN (Print) | 0255-5476 |
Other
| Other | International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 |
|---|---|
| Country | Japan |
| City | Tsukuba |
| Period | 01/10/28 → 01/11/2 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
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Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes. / Song, Jung Gyun; Shin, Moo Whan.
Silicon Carbide and Related Materials 2001. ed. / H. Harima; T. Kimoto; S. Nishino; S. Yoshida. Trans Tech Publications Ltd, 2002. p. 957-960 (Materials Science Forum; Vol. 389-393).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes
AU - Song, Jung Gyun
AU - Shin, Moo Whan
PY - 2002/1/1
Y1 - 2002/1/1
N2 - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.
AB - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.
UR - http://www.scopus.com/inward/record.url?scp=0036432407&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036432407&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.389-393.957
DO - 10.4028/www.scientific.net/MSF.389-393.957
M3 - Conference contribution
AN - SCOPUS:0036432407
SN - 9780878498949
T3 - Materials Science Forum
SP - 957
EP - 960
BT - Silicon Carbide and Related Materials 2001
A2 - Harima, H.
A2 - Kimoto, T.
A2 - Nishino, S.
A2 - Yoshida, S.
PB - Trans Tech Publications Ltd
ER -