Photoemission spectroscopy study of Alq3 and metal mixed interfaces

Soonnam Kwon, Shin Cheul Kim, Youngkyoo Kim, Jae Gyoung Lee, Sunwook Kim, Kwangho Jeong

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The electronic structures of mixed layers of tris (8-hydroxy-quinoline) aluminum (Alq3) and metal (Au and Al) were studied by ultraviolet and x-ray photoelectron spectroscopy (UPS and XPS). The devices with a mixed layer between Alq3 and the cathode were fabricated. The barrier height for electron injection was reduced by doping metals (Au or Al) into Alq3. The doping enhanced the performance of the device. From the XPS study, the doped Au metal did not react with Alq3 and in addition, the doped Al metal reacted slightly with Alq3. From the UPS study, the highest occupied molecular orbit shifted to a higher binding energy for both metal mixed layers. From these studies, it is concluded that the enhanced device characteristics come from the barrier height reduction by the metal doped in Alq3 rather than from the charge transfer complex induced by the reaction of Alq3 and metal.

Original languageEnglish
Pages (from-to)4595-4597
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number27
DOIs
Publication statusPublished - 2001 Dec 31

Fingerprint

photoelectric emission
metals
spectroscopy
quinoline
x ray spectroscopy
binding energy
cathodes
charge transfer
photoelectron spectroscopy
injection
electronic structure
aluminum
orbits
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kwon, Soonnam ; Kim, Shin Cheul ; Kim, Youngkyoo ; Lee, Jae Gyoung ; Kim, Sunwook ; Jeong, Kwangho. / Photoemission spectroscopy study of Alq3 and metal mixed interfaces. In: Applied Physics Letters. 2001 ; Vol. 79, No. 27. pp. 4595-4597.
@article{14dbea1f239a442ea0afa4c3c02d7c6b,
title = "Photoemission spectroscopy study of Alq3 and metal mixed interfaces",
abstract = "The electronic structures of mixed layers of tris (8-hydroxy-quinoline) aluminum (Alq3) and metal (Au and Al) were studied by ultraviolet and x-ray photoelectron spectroscopy (UPS and XPS). The devices with a mixed layer between Alq3 and the cathode were fabricated. The barrier height for electron injection was reduced by doping metals (Au or Al) into Alq3. The doping enhanced the performance of the device. From the XPS study, the doped Au metal did not react with Alq3 and in addition, the doped Al metal reacted slightly with Alq3. From the UPS study, the highest occupied molecular orbit shifted to a higher binding energy for both metal mixed layers. From these studies, it is concluded that the enhanced device characteristics come from the barrier height reduction by the metal doped in Alq3 rather than from the charge transfer complex induced by the reaction of Alq3 and metal.",
author = "Soonnam Kwon and Kim, {Shin Cheul} and Youngkyoo Kim and Lee, {Jae Gyoung} and Sunwook Kim and Kwangho Jeong",
year = "2001",
month = "12",
day = "31",
doi = "10.1063/1.1428777",
language = "English",
volume = "79",
pages = "4595--4597",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "27",

}

Photoemission spectroscopy study of Alq3 and metal mixed interfaces. / Kwon, Soonnam; Kim, Shin Cheul; Kim, Youngkyoo; Lee, Jae Gyoung; Kim, Sunwook; Jeong, Kwangho.

In: Applied Physics Letters, Vol. 79, No. 27, 31.12.2001, p. 4595-4597.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoemission spectroscopy study of Alq3 and metal mixed interfaces

AU - Kwon, Soonnam

AU - Kim, Shin Cheul

AU - Kim, Youngkyoo

AU - Lee, Jae Gyoung

AU - Kim, Sunwook

AU - Jeong, Kwangho

PY - 2001/12/31

Y1 - 2001/12/31

N2 - The electronic structures of mixed layers of tris (8-hydroxy-quinoline) aluminum (Alq3) and metal (Au and Al) were studied by ultraviolet and x-ray photoelectron spectroscopy (UPS and XPS). The devices with a mixed layer between Alq3 and the cathode were fabricated. The barrier height for electron injection was reduced by doping metals (Au or Al) into Alq3. The doping enhanced the performance of the device. From the XPS study, the doped Au metal did not react with Alq3 and in addition, the doped Al metal reacted slightly with Alq3. From the UPS study, the highest occupied molecular orbit shifted to a higher binding energy for both metal mixed layers. From these studies, it is concluded that the enhanced device characteristics come from the barrier height reduction by the metal doped in Alq3 rather than from the charge transfer complex induced by the reaction of Alq3 and metal.

AB - The electronic structures of mixed layers of tris (8-hydroxy-quinoline) aluminum (Alq3) and metal (Au and Al) were studied by ultraviolet and x-ray photoelectron spectroscopy (UPS and XPS). The devices with a mixed layer between Alq3 and the cathode were fabricated. The barrier height for electron injection was reduced by doping metals (Au or Al) into Alq3. The doping enhanced the performance of the device. From the XPS study, the doped Au metal did not react with Alq3 and in addition, the doped Al metal reacted slightly with Alq3. From the UPS study, the highest occupied molecular orbit shifted to a higher binding energy for both metal mixed layers. From these studies, it is concluded that the enhanced device characteristics come from the barrier height reduction by the metal doped in Alq3 rather than from the charge transfer complex induced by the reaction of Alq3 and metal.

UR - http://www.scopus.com/inward/record.url?scp=0035980998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035980998&partnerID=8YFLogxK

U2 - 10.1063/1.1428777

DO - 10.1063/1.1428777

M3 - Article

VL - 79

SP - 4595

EP - 4597

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 27

ER -