Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors

Si Joon Kim, Bayram Gunduz, Doo Hyun Yoon, Hyun Jae Kim, Ahmed A. Al-Ghamdi, F. Yakuphanoglu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The photoresponse properties of the BaInZnO (BIZO) thin film transistors were investigated by the output and transfer characteristics. The drain current of the BIZO (10% Ba) and BIZO (20% Ba) transistors in turn-on and turn-off states is significantly increased with light illumination. The photoresponse values of the BIZO (10% Ba) and BIZO (20% Ba) transistors in turn-off and turn-on states were found to be 4.56 and 6.27, respectively, while the photoresponse values of the BIZO (10% Ba) and BIZO (20% Ba) transistors in turn-off and turn-on states were found to be 6.14 and 11.714, respectively. The photoresponse values of the transistors in turn-off state are lower than that of turn-on state. This indicates that the dominant photocurrent mechanism of the BIZO transistors is based on photovoltaic effects. The photoresponse properties of the BIZO transistors were improved with the increasing doping ratio of Ba. The obtained results indicate that BIZO transistors could be used as a photosensor for optoelectronic applications.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalSensors and Actuators, A: Physical
Volume193
DOIs
Publication statusPublished - 2013 Feb 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors'. Together they form a unique fingerprint.

  • Cite this