Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

Hee Sung Lee, Kwang H. Lee, Youn Gyoung Chang, Syed Raza Ali Raza, Seongil Im, Dong Ho Kim, Hye Ri Kim, Gun Hwan Lee

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3 Citations (Scopus)

Abstract

Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2 O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiO x and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼2 V as we applied a blue illumination onto semitransparent NiOx gate, through which the photons are transmitted to excite the trapped electrons at the Al2 O3 dielectric/GTZO channel interface.

Original languageEnglish
Article number223505
JournalApplied Physics Letters
Volume98
Issue number22
DOIs
Publication statusPublished - 2011 May 30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Lee, H. S., Lee, K. H., Chang, Y. G., Raza, S. R. A., Im, S., Kim, D. H., Kim, H. R., & Lee, G. H. (2011). Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode. Applied Physics Letters, 98(22), [223505]. https://doi.org/10.1063/1.3598396