Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

Hee Sung Lee; Kwang H. Lee; Youn Gyoung Chang; Syed Raza Ali Raza; Seongil Im; Dong Ho Kim; Hye Ri Kim; Gun Hwan Lee

doi:10.1063/1.3598396

Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

Hee Sung Lee, Kwang H. Lee, Youn Gyoung Chang, Syed Raza Ali Raza, Seongil Im, Dong Ho Kim, Hye Ri Kim, Gun Hwan Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al₂ O₃ dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiO _x and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼2 V as we applied a blue illumination onto semitransparent NiO_x gate, through which the photons are transmitted to excite the trapped electrons at the Al₂ O₃ dielectric/GTZO channel interface.

Original language	English
Article number	223505
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3598396
Publication status	Published - 2011 May 30

Bibliographical note

Funding Information:
We acknowledge the financial support from NRF (NRL program, Grant No. 2011-0000375) and BK21 Project. H. S. Lee was supported by LOTTE scholar fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3598396

Cite this

@article{dd2322fb870b4a4fbe686039261648a1,

title = "Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode",

abstract = "Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2 O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiO x and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼2 V as we applied a blue illumination onto semitransparent NiOx gate, through which the photons are transmitted to excite the trapped electrons at the Al2 O3 dielectric/GTZO channel interface.",

author = "Lee, {Hee Sung} and Lee, {Kwang H.} and Chang, {Youn Gyoung} and Raza, {Syed Raza Ali} and Seongil Im and Kim, {Dong Ho} and Kim, {Hye Ri} and Lee, {Gun Hwan}",

note = "Funding Information: We acknowledge the financial support from NRF (NRL program, Grant No. 2011-0000375) and BK21 Project. H. S. Lee was supported by LOTTE scholar fellowship. ",

year = "2011",

month = may,

day = "30",

doi = "10.1063/1.3598396",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

AU - Lee, Hee Sung

AU - Lee, Kwang H.

AU - Chang, Youn Gyoung

AU - Raza, Syed Raza Ali

AU - Im, Seongil

AU - Kim, Dong Ho

AU - Kim, Hye Ri

AU - Lee, Gun Hwan

N1 - Funding Information: We acknowledge the financial support from NRF (NRL program, Grant No. 2011-0000375) and BK21 Project. H. S. Lee was supported by LOTTE scholar fellowship.

PY - 2011/5/30

Y1 - 2011/5/30

N2 - Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2 O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiO x and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼2 V as we applied a blue illumination onto semitransparent NiOx gate, through which the photons are transmitted to excite the trapped electrons at the Al2 O3 dielectric/GTZO channel interface.

AB - Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2 O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiO x and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼2 V as we applied a blue illumination onto semitransparent NiOx gate, through which the photons are transmitted to excite the trapped electrons at the Al2 O3 dielectric/GTZO channel interface.

UR - http://www.scopus.com/inward/record.url?scp=79958784776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958784776&partnerID=8YFLogxK

U2 - 10.1063/1.3598396

DO - 10.1063/1.3598396

M3 - Article

AN - SCOPUS:79958784776

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223505

ER -

Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this