Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2 O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiO x and opaque Al. Since the two electrodes have so different work functions as to properly arrange the respective threshold voltages of driver and load TFTs, our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 25 for electrical gating. A dynamic photogating was demonstrated with an output photogain of ∼2 V as we applied a blue illumination onto semitransparent NiOx gate, through which the photons are transmitted to excite the trapped electrons at the Al2 O3 dielectric/GTZO channel interface.
|Journal||Applied Physics Letters|
|Publication status||Published - 2011 May 30|
Bibliographical noteFunding Information:
We acknowledge the financial support from NRF (NRL program, Grant No. 2011-0000375) and BK21 Project. H. S. Lee was supported by LOTTE scholar fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)