Compressively strained InGaAs and InGaAlAs multiple quantum wells were grown on InP by molecular beam epitaxy and their material qualities were investigated by double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). From the satellite peaks in a DCXRD scan, precise layer structures were determined. By comparing PL spectra of strained quantum wells having different well thicknesses, 75 Å thick quantum wells were found to be more suitable for laser diode applications than thinner wells. To achieve the required lasing wavelength of 1.55 μm with 75 Å wide strained quantum wells, quaternary InGaAlAs quantum wells were studied. It was also found that quaternary InGaAlAs strained quantum wells are less prone to strain relation than ternary InGaAs.
Bibliographical noteFunding Information:
This work was supported by the Joint Services Electronics Program through the MIT Research Laboratory of Electronics, Contract DAALO3-92-C-0001, and the Defense Advanced Research Projects Agency through the National Center for Integrated Photonics Technology, Subcontract 542383.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry