Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

Eun Joo Shin, Joo In Lee, Nguyen Quang Liem, Dongho Kim, Jeong Sik Son, Jae Young Leem, Sam Kyu Noh, Donghan Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.

Original languageEnglish
Pages (from-to)855-859
Number of pages5
JournalSolid State Communications
Volume102
Issue number12
DOIs
Publication statusPublished - 1997 Jan 1

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Epilayers
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
photoluminescence
decay
Substrates
Lattice mismatch
life (durability)
Chemical analysis
sulfur
Sulfur
gallium arsenide
defects
Defects

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Shin, Eun Joo ; Lee, Joo In ; Liem, Nguyen Quang ; Kim, Dongho ; Son, Jeong Sik ; Leem, Jae Young ; Noh, Sam Kyu ; Lee, Donghan. / Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy. In: Solid State Communications. 1997 ; Vol. 102, No. 12. pp. 855-859.
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abstract = "The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.",
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Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy. / Shin, Eun Joo; Lee, Joo In; Liem, Nguyen Quang; Kim, Dongho; Son, Jeong Sik; Leem, Jae Young; Noh, Sam Kyu; Lee, Donghan.

In: Solid State Communications, Vol. 102, No. 12, 01.01.1997, p. 855-859.

Research output: Contribution to journalArticle

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T1 - Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

AU - Shin, Eun Joo

AU - Lee, Joo In

AU - Liem, Nguyen Quang

AU - Kim, Dongho

AU - Son, Jeong Sik

AU - Leem, Jae Young

AU - Noh, Sam Kyu

AU - Lee, Donghan

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N2 - The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.

AB - The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.

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