Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

Eun Joo Shin, Joo In Lee, Nguyen Quang Liem, Dongho Kim, Jeong Sik Son, Jae Young Leem, Sam Kyu Noh, Donghan Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.

Original languageEnglish
Pages (from-to)855-859
Number of pages5
JournalSolid State Communications
Issue number12
Publication statusPublished - 1997 Jun

Bibliographical note

Funding Information:
Acknowledgements-This work was partiallys upported by the Ministry of Science and Technology and the Center for Molecular Science through the Korea Sciencea ndE ngineeringF oundation(K OSEF).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Photoluminescence decay measurements of ZnS<sub>x</sub>Se<sub>1-x</sub> (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this