Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

Nguyen Quang Liem, Joo In Lee, Vu Xuan Quang, Do Xuan Thanh, Dongho Kim, Jeong Sik Son, Sam Kyu Noh

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe.

Original languageEnglish
Pages (from-to)441-446
Number of pages6
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Liem, N. Q., Lee, J. I., Quang, V. X., Thanh, D. X., Kim, D., Son, J. S., & Noh, S. K. (2000). Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation. Journal of Crystal Growth, 214, 441-446. https://doi.org/10.1016/S0022-0248(00)00126-3