Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures

Hyo Bae Kim, Tae Gon Kim, Keun Hwa Chae, Chung Nam Whang, Jun Yong Jeong, Min Suk Oh, Seongil Im, Jong Han Song

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Si ions at an energy of 70 keV and a dose of 1.5×10 16 ions/cm 2 were implanted at room and elevated temperatures into 300 nm-thick SiO 2 layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak intensities were observed from the sample implanted at elevated substrate temperatures than from those implanted at room temperature. On the contrary, the electron spin resonance signal decrease in intensity as the substrate temperature increases for implantation. From these observations, we conclude that increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO 2 while reducing the density of non-radiative paramagnetic defects.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999 Dec 1

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implantation
photoluminescence
temperature
room temperature
radiative recombination
electron paramagnetic resonance
ions
luminescence
dosage
defects
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, H. B., Kim, T. G., Chae, K. H., Whang, C. N., Jeong, J. Y., Oh, M. S., ... Song, J. H. (1999). Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures. Journal of the Korean Physical Society, 35(SUPPL. 2).
Kim, Hyo Bae ; Kim, Tae Gon ; Chae, Keun Hwa ; Whang, Chung Nam ; Jeong, Jun Yong ; Oh, Min Suk ; Im, Seongil ; Song, Jong Han. / Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures. In: Journal of the Korean Physical Society. 1999 ; Vol. 35, No. SUPPL. 2.
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abstract = "Si ions at an energy of 70 keV and a dose of 1.5×10 16 ions/cm 2 were implanted at room and elevated temperatures into 300 nm-thick SiO 2 layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak intensities were observed from the sample implanted at elevated substrate temperatures than from those implanted at room temperature. On the contrary, the electron spin resonance signal decrease in intensity as the substrate temperature increases for implantation. From these observations, we conclude that increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO 2 while reducing the density of non-radiative paramagnetic defects.",
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Kim, HB, Kim, TG, Chae, KH, Whang, CN, Jeong, JY, Oh, MS, Im, S & Song, JH 1999, 'Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures', Journal of the Korean Physical Society, vol. 35, no. SUPPL. 2.

Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures. / Kim, Hyo Bae; Kim, Tae Gon; Chae, Keun Hwa; Whang, Chung Nam; Jeong, Jun Yong; Oh, Min Suk; Im, Seongil; Song, Jong Han.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 2, 01.12.1999.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures

AU - Kim, Hyo Bae

AU - Kim, Tae Gon

AU - Chae, Keun Hwa

AU - Whang, Chung Nam

AU - Jeong, Jun Yong

AU - Oh, Min Suk

AU - Im, Seongil

AU - Song, Jong Han

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Si ions at an energy of 70 keV and a dose of 1.5×10 16 ions/cm 2 were implanted at room and elevated temperatures into 300 nm-thick SiO 2 layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak intensities were observed from the sample implanted at elevated substrate temperatures than from those implanted at room temperature. On the contrary, the electron spin resonance signal decrease in intensity as the substrate temperature increases for implantation. From these observations, we conclude that increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO 2 while reducing the density of non-radiative paramagnetic defects.

AB - Si ions at an energy of 70 keV and a dose of 1.5×10 16 ions/cm 2 were implanted at room and elevated temperatures into 300 nm-thick SiO 2 layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak intensities were observed from the sample implanted at elevated substrate temperatures than from those implanted at room temperature. On the contrary, the electron spin resonance signal decrease in intensity as the substrate temperature increases for implantation. From these observations, we conclude that increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO 2 while reducing the density of non-radiative paramagnetic defects.

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M3 - Article

VL - 35

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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Kim HB, Kim TG, Chae KH, Whang CN, Jeong JY, Oh MS et al. Photoluminescence induced by Si-implantation into SiO 2 layers at elevated temperatures. Journal of the Korean Physical Society. 1999 Dec 1;35(SUPPL. 2).