Photoluminescence investigation of ferromagnetic Ga 1-x Mn x N layers with GaN templates grown on sapphire (0 0 0 1) substrates

I. T. Yoon, M. H. Ham, J. M. Myoung

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Abstract

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga 1-x Mn x N layers (where x ≈ 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga 1-x Mn x N layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga 1-x Mn x N layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 × 10 -4 , 2.7 × 10 -4 , 3.4 × 10 -4 eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga 1-x Mn x N layers increased, the temperature dependence of the band-gap energy was clearly reduced.

Original languageEnglish
Pages (from-to)4840-4843
Number of pages4
JournalApplied Surface Science
Volume255
Issue number9
DOIs
Publication statusPublished - 2009 Feb 15

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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