Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing

Yoonsung Nam, Jengsu Yoo, Soo Kyung Chang, Jae Hyung Wi, Woo Jung Lee, Dae Hyung Cho, Yong Duck Chung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.

Original languageEnglish
Pages (from-to)595-599
Number of pages5
JournalJournal of Luminescence
Volume188
DOIs
Publication statusPublished - 2017 Aug

Fingerprint

Sulfur
Solar cells
Photoluminescence
Buffers
sulfur
solar cells
Annealing
photoluminescence
Temperature
annealing
Selenium
Vacancies
Copper
buffers
Buffer layers
selenium
absorbers
copper
temperature
energy

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Nam, Yoonsung ; Yoo, Jengsu ; Chang, Soo Kyung ; Wi, Jae Hyung ; Lee, Woo Jung ; Cho, Dae Hyung ; Chung, Yong Duck. / Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing. In: Journal of Luminescence. 2017 ; Vol. 188. pp. 595-599.
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abstract = "The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.",
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Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing. / Nam, Yoonsung; Yoo, Jengsu; Chang, Soo Kyung; Wi, Jae Hyung; Lee, Woo Jung; Cho, Dae Hyung; Chung, Yong Duck.

In: Journal of Luminescence, Vol. 188, 08.2017, p. 595-599.

Research output: Contribution to journalArticle

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AU - Cho, Dae Hyung

AU - Chung, Yong Duck

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