Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer

Soon Il Jung, Ilgu Yun, Chang Myung Lee, Joo In Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal-organic chemical vapor deposition and their characteristics were evaluated by photoluminescence (PL) measurements. In a typical structure, a low indium composition and wide potential well was used to be an EEL, and a six-fold MQW was used to be an active layer where the injected carriers recombine. By comparing the PL spectral characteristics of the MQW samples, the PL intensity of MQW with EEL is about 10 times higher than that of typical MQW. Experimental results indicate that the high electron capture rate of the MQW active region can be achieved by employing EEL.

Original languageEnglish
Pages (from-to)943-945
Number of pages3
JournalCurrent Applied Physics
Volume9
Issue number5
DOIs
Publication statusPublished - 2009 Sep 1

Fingerprint

Semiconductor quantum wells
Photoluminescence
quantum wells
photoluminescence
Electrons
electrons
Organic Chemicals
Indium
Organic chemicals
electron capture
metalorganic chemical vapor deposition
indium
Chemical vapor deposition
Metals
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Jung, Soon Il ; Yun, Ilgu ; Lee, Chang Myung ; Lee, Joo In. / Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer. In: Current Applied Physics. 2009 ; Vol. 9, No. 5. pp. 943-945.
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Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer. / Jung, Soon Il; Yun, Ilgu; Lee, Chang Myung; Lee, Joo In.

In: Current Applied Physics, Vol. 9, No. 5, 01.09.2009, p. 943-945.

Research output: Contribution to journalArticle

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T1 - Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer

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AU - Lee, Chang Myung

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AB - InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal-organic chemical vapor deposition and their characteristics were evaluated by photoluminescence (PL) measurements. In a typical structure, a low indium composition and wide potential well was used to be an EEL, and a six-fold MQW was used to be an active layer where the injected carriers recombine. By comparing the PL spectral characteristics of the MQW samples, the PL intensity of MQW with EEL is about 10 times higher than that of typical MQW. Experimental results indicate that the high electron capture rate of the MQW active region can be achieved by employing EEL.

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