TY - JOUR
T1 - Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer
AU - Jung, Soon Il
AU - Yun, Ilgu
AU - Lee, Chang Myung
AU - Lee, Joo In
PY - 2009/9
Y1 - 2009/9
N2 - InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal-organic chemical vapor deposition and their characteristics were evaluated by photoluminescence (PL) measurements. In a typical structure, a low indium composition and wide potential well was used to be an EEL, and a six-fold MQW was used to be an active layer where the injected carriers recombine. By comparing the PL spectral characteristics of the MQW samples, the PL intensity of MQW with EEL is about 10 times higher than that of typical MQW. Experimental results indicate that the high electron capture rate of the MQW active region can be achieved by employing EEL.
AB - InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal-organic chemical vapor deposition and their characteristics were evaluated by photoluminescence (PL) measurements. In a typical structure, a low indium composition and wide potential well was used to be an EEL, and a six-fold MQW was used to be an active layer where the injected carriers recombine. By comparing the PL spectral characteristics of the MQW samples, the PL intensity of MQW with EEL is about 10 times higher than that of typical MQW. Experimental results indicate that the high electron capture rate of the MQW active region can be achieved by employing EEL.
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U2 - 10.1016/j.cap.2008.08.055
DO - 10.1016/j.cap.2008.08.055
M3 - Article
AN - SCOPUS:67349283060
SN - 1567-1739
VL - 9
SP - 943
EP - 945
JO - Current Applied Physics
JF - Current Applied Physics
IS - 5
ER -