Abstract
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 280-283 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Jun 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
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Jung, S. I., Yeo, H. Y., Yun, I., Leem, J. Y., Han, I. K., Kim, J. S., & Lee, J. I. (2006). Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots. Physica E: Low-Dimensional Systems and Nanostructures, 33(1), 280-283. https://doi.org/10.1016/j.physe.2006.03.150