Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots

S. I. Jung; H. Y. Yeo; I. Yun; J. Y. Leem; I. K. Han; J. S. Kim; J. I. Lee

doi:10.1016/j.physe.2006.03.150

Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, I. K. Han, J. S. Kim, J. I. Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

Original language	English
Pages (from-to)	280-283
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	33
Issue number	1
DOIs	https://doi.org/10.1016/j.physe.2006.03.150
Publication status	Published - 2006 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2006.03.150

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title = "Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots",

abstract = "We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.",

author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Leem, {J. Y.} and Han, {I. K.} and Kim, {J. S.} and Lee, {J. I.}",

year = "2006",

month = jun,

doi = "10.1016/j.physe.2006.03.150",

language = "English",

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T1 - Photoluminescence study on the growth of self-assembled InAs quantum dots

T2 - Formation characteristics of bimodal-sized quantum dots

AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Leem, J. Y.

AU - Han, I. K.

AU - Kim, J. S.

AU - Lee, J. I.

PY - 2006/6

Y1 - 2006/6

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AB - We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

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EP - 283

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1

ER -

Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots

Abstract

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