Abstract
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 280-283 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
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Photoluminescence study on the growth of self-assembled InAs quantum dots : Formation characteristics of bimodal-sized quantum dots. / Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 33, No. 1, 01.06.2006, p. 280-283.Research output: Contribution to journal › Article
TY - JOUR
T1 - Photoluminescence study on the growth of self-assembled InAs quantum dots
T2 - Formation characteristics of bimodal-sized quantum dots
AU - Jung, S. I.
AU - Yeo, H. Y.
AU - Yun, I.
AU - Leem, J. Y.
AU - Han, I. K.
AU - Kim, J. S.
AU - Lee, J. I.
PY - 2006/6/1
Y1 - 2006/6/1
N2 - We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
AB - We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=33646909670&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646909670&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2006.03.150
DO - 10.1016/j.physe.2006.03.150
M3 - Article
AN - SCOPUS:33646909670
VL - 33
SP - 280
EP - 283
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1
ER -