Photoluminescence study on the growth of self-assembled InAs quantum dots

Formation characteristics of bimodal-sized quantum dots

S. I. Jung, H. Y. Yeo, Ilgu Yun, J. Y. Leem, I. K. Han, J. S. Kim, J. I. Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

Original languageEnglish
Pages (from-to)280-283
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume33
Issue number1
DOIs
Publication statusPublished - 2006 Jun 1

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Electron transitions
Ground state
Temperature
ground state
temperature
indium arsenide
Substrates
excitation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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abstract = "We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.",
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Photoluminescence study on the growth of self-assembled InAs quantum dots : Formation characteristics of bimodal-sized quantum dots. / Jung, S. I.; Yeo, H. Y.; Yun, Ilgu; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 33, No. 1, 01.06.2006, p. 280-283.

Research output: Contribution to journalArticle

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AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, Ilgu

AU - Leem, J. Y.

AU - Han, I. K.

AU - Kim, J. S.

AU - Lee, J. I.

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