Photoluminescences from Si Nanocrystals in ion-beam-mixed Si/SiO2 layers

K. H. Chae; J. H. Son; H. B. Kim; S. Im; I. W. Lyo; C. N. Whang

Photoluminescences from Si Nanocrystals in ion-beam-mixed Si/SiO₂ layers

K. H. Chae, J. H. Son, H. B. Kim, S. Im, I. W. Lyo, C. N. Whang

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Photoluminescence (PL) from Ar-ion-beam-mixed SiO₂/Si/SiO₂ layers and [SiO₂/Si]×3/SiO₂ layers has been studied to elucidate the luminescence origins. The SiO₂/Si/SiO₂ layers and the [SiO₂/Si]×3/SiO₂ layers were irradiated by 80-keV Ar ions with a dose of 1×10¹⁶ ions/cm² at room temperature (RT), which was followed by high-temperature annealing in N² ambient. In the case of the SiO₂/Si/SiO₂ layers, the PL spectra excited by the Ar-laser (457.9 nm) showed an intense broad luminescent band with a peak near 720 nm, at RT. The red-light emission is attributed to the luminescence from silicon nanocrystals produced by silicon precipitation. The formation of nanocrystals in SiO₂ matrices was confirmed by cross-sectional high-resolution transmission electron microscopy. The [SiO₂/Si]×3/SiO₂ layers shows a broad luminescent band with a peak near 600 nm. The orange-light emission is attributed to the luminescence from the Si nanocrystals produced by ion-beam mixing and subsequent annealing at high temperature.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	36
Issue number	3
Publication status	Published - 2000 Mar

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Photoluminescences from Si Nanocrystals in ion-beam-mixed Si/SiO2 layers",

abstract = "Photoluminescence (PL) from Ar-ion-beam-mixed SiO2/Si/SiO2 layers and [SiO2/Si]×3/SiO2 layers has been studied to elucidate the luminescence origins. The SiO2/Si/SiO2 layers and the [SiO2/Si]×3/SiO2 layers were irradiated by 80-keV Ar ions with a dose of 1×1016 ions/cm2 at room temperature (RT), which was followed by high-temperature annealing in N2 ambient. In the case of the SiO2/Si/SiO2 layers, the PL spectra excited by the Ar-laser (457.9 nm) showed an intense broad luminescent band with a peak near 720 nm, at RT. The red-light emission is attributed to the luminescence from silicon nanocrystals produced by silicon precipitation. The formation of nanocrystals in SiO2 matrices was confirmed by cross-sectional high-resolution transmission electron microscopy. The [SiO2/Si]×3/SiO2 layers shows a broad luminescent band with a peak near 600 nm. The orange-light emission is attributed to the luminescence from the Si nanocrystals produced by ion-beam mixing and subsequent annealing at high temperature.",

author = "Chae, {K. H.} and Son, {J. H.} and Kim, {H. B.} and S. Im and Lyo, {I. W.} and Whang, {C. N.}",

year = "2000",

month = mar,

language = "English",

volume = "36",

pages = "169--172",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

}

TY - JOUR

T1 - Photoluminescences from Si Nanocrystals in ion-beam-mixed Si/SiO2 layers

AU - Chae, K. H.

AU - Son, J. H.

AU - Kim, H. B.

AU - Im, S.

AU - Lyo, I. W.

AU - Whang, C. N.

PY - 2000/3

Y1 - 2000/3

N2 - Photoluminescence (PL) from Ar-ion-beam-mixed SiO2/Si/SiO2 layers and [SiO2/Si]×3/SiO2 layers has been studied to elucidate the luminescence origins. The SiO2/Si/SiO2 layers and the [SiO2/Si]×3/SiO2 layers were irradiated by 80-keV Ar ions with a dose of 1×1016 ions/cm2 at room temperature (RT), which was followed by high-temperature annealing in N2 ambient. In the case of the SiO2/Si/SiO2 layers, the PL spectra excited by the Ar-laser (457.9 nm) showed an intense broad luminescent band with a peak near 720 nm, at RT. The red-light emission is attributed to the luminescence from silicon nanocrystals produced by silicon precipitation. The formation of nanocrystals in SiO2 matrices was confirmed by cross-sectional high-resolution transmission electron microscopy. The [SiO2/Si]×3/SiO2 layers shows a broad luminescent band with a peak near 600 nm. The orange-light emission is attributed to the luminescence from the Si nanocrystals produced by ion-beam mixing and subsequent annealing at high temperature.

AB - Photoluminescence (PL) from Ar-ion-beam-mixed SiO2/Si/SiO2 layers and [SiO2/Si]×3/SiO2 layers has been studied to elucidate the luminescence origins. The SiO2/Si/SiO2 layers and the [SiO2/Si]×3/SiO2 layers were irradiated by 80-keV Ar ions with a dose of 1×1016 ions/cm2 at room temperature (RT), which was followed by high-temperature annealing in N2 ambient. In the case of the SiO2/Si/SiO2 layers, the PL spectra excited by the Ar-laser (457.9 nm) showed an intense broad luminescent band with a peak near 720 nm, at RT. The red-light emission is attributed to the luminescence from silicon nanocrystals produced by silicon precipitation. The formation of nanocrystals in SiO2 matrices was confirmed by cross-sectional high-resolution transmission electron microscopy. The [SiO2/Si]×3/SiO2 layers shows a broad luminescent band with a peak near 600 nm. The orange-light emission is attributed to the luminescence from the Si nanocrystals produced by ion-beam mixing and subsequent annealing at high temperature.

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M3 - Article

AN - SCOPUS:0034347289

VL - 36

SP - 169

EP - 172

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -

Photoluminescences from Si Nanocrystals in ion-beam-mixed Si/SiO2 layers

Abstract

All Science Journal Classification (ASJC) codes

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Photoluminescences from Si Nanocrystals in ion-beam-mixed Si/SiO₂ layers