Abstract
Photoluminescence (PL) from Ar-ion-beam-mixed SiO2/Si/SiO2 layers and [SiO2/Si]×3/SiO2 layers has been studied to elucidate the luminescence origins. The SiO2/Si/SiO2 layers and the [SiO2/Si]×3/SiO2 layers were irradiated by 80-keV Ar ions with a dose of 1×1016 ions/cm2 at room temperature (RT), which was followed by high-temperature annealing in N2 ambient. In the case of the SiO2/Si/SiO2 layers, the PL spectra excited by the Ar-laser (457.9 nm) showed an intense broad luminescent band with a peak near 720 nm, at RT. The red-light emission is attributed to the luminescence from silicon nanocrystals produced by silicon precipitation. The formation of nanocrystals in SiO2 matrices was confirmed by cross-sectional high-resolution transmission electron microscopy. The [SiO2/Si]×3/SiO2 layers shows a broad luminescent band with a peak near 600 nm. The orange-light emission is attributed to the luminescence from the Si nanocrystals produced by ion-beam mixing and subsequent annealing at high temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 169-172 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 36 |
| Issue number | 3 |
| Publication status | Published - 2000 Mar |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)