Photopatternable organosiloxane-based inorganic-organic SiO 2-ZrO2 hybrid dielectrics for organic thin film transistors

Sunho Jeong, Seonghee Lee, Dongjo Kim, Hyunjung Shin, Jooho Moon

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A photopatternable and solution-processable thin gate dielectric for organic thin-film transistors has been fabricated here using an organosiloxane-based organic-inorganic hybrid material. Incorporation of a UV-sensitive functional group allowed us to directly obtain a high-resolution patterned gate dielectric using conventional photolithography. Uniform distribution of ZrO2 nanoclusters increased the dielectric constant of the hybrid material from which the hydroxyl groups were removed by low-temperature heat treatment. Coplanar-type organic thin-film transistors utilizing the hybrid dielectrics showed a low threshold voltage and nearly no shift in the threshold voltage due to their high capacitance and the absence of the hydroxyl groups.

Original languageEnglish
Pages (from-to)16083-16087
Number of pages5
JournalJournal of Physical Chemistry C
Volume111
Issue number44
DOIs
Publication statusPublished - 2007 Nov 8

Fingerprint

Gate dielectrics
Hybrid materials
Thin film transistors
Threshold voltage
Hydroxyl Radical
transistors
Low temperature operations
threshold voltage
Nanoclusters
Photolithography
thin films
Functional groups
Permittivity
Capacitance
photolithography
nanoclusters
low voltage
heat treatment
capacitance
permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Jeong, Sunho ; Lee, Seonghee ; Kim, Dongjo ; Shin, Hyunjung ; Moon, Jooho. / Photopatternable organosiloxane-based inorganic-organic SiO 2-ZrO2 hybrid dielectrics for organic thin film transistors. In: Journal of Physical Chemistry C. 2007 ; Vol. 111, No. 44. pp. 16083-16087.
@article{8a67f6b5ac0c45e38172565d5b1ac8ed,
title = "Photopatternable organosiloxane-based inorganic-organic SiO 2-ZrO2 hybrid dielectrics for organic thin film transistors",
abstract = "A photopatternable and solution-processable thin gate dielectric for organic thin-film transistors has been fabricated here using an organosiloxane-based organic-inorganic hybrid material. Incorporation of a UV-sensitive functional group allowed us to directly obtain a high-resolution patterned gate dielectric using conventional photolithography. Uniform distribution of ZrO2 nanoclusters increased the dielectric constant of the hybrid material from which the hydroxyl groups were removed by low-temperature heat treatment. Coplanar-type organic thin-film transistors utilizing the hybrid dielectrics showed a low threshold voltage and nearly no shift in the threshold voltage due to their high capacitance and the absence of the hydroxyl groups.",
author = "Sunho Jeong and Seonghee Lee and Dongjo Kim and Hyunjung Shin and Jooho Moon",
year = "2007",
month = "11",
day = "8",
doi = "10.1021/jp0761463",
language = "English",
volume = "111",
pages = "16083--16087",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "44",

}

Photopatternable organosiloxane-based inorganic-organic SiO 2-ZrO2 hybrid dielectrics for organic thin film transistors. / Jeong, Sunho; Lee, Seonghee; Kim, Dongjo; Shin, Hyunjung; Moon, Jooho.

In: Journal of Physical Chemistry C, Vol. 111, No. 44, 08.11.2007, p. 16083-16087.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photopatternable organosiloxane-based inorganic-organic SiO 2-ZrO2 hybrid dielectrics for organic thin film transistors

AU - Jeong, Sunho

AU - Lee, Seonghee

AU - Kim, Dongjo

AU - Shin, Hyunjung

AU - Moon, Jooho

PY - 2007/11/8

Y1 - 2007/11/8

N2 - A photopatternable and solution-processable thin gate dielectric for organic thin-film transistors has been fabricated here using an organosiloxane-based organic-inorganic hybrid material. Incorporation of a UV-sensitive functional group allowed us to directly obtain a high-resolution patterned gate dielectric using conventional photolithography. Uniform distribution of ZrO2 nanoclusters increased the dielectric constant of the hybrid material from which the hydroxyl groups were removed by low-temperature heat treatment. Coplanar-type organic thin-film transistors utilizing the hybrid dielectrics showed a low threshold voltage and nearly no shift in the threshold voltage due to their high capacitance and the absence of the hydroxyl groups.

AB - A photopatternable and solution-processable thin gate dielectric for organic thin-film transistors has been fabricated here using an organosiloxane-based organic-inorganic hybrid material. Incorporation of a UV-sensitive functional group allowed us to directly obtain a high-resolution patterned gate dielectric using conventional photolithography. Uniform distribution of ZrO2 nanoclusters increased the dielectric constant of the hybrid material from which the hydroxyl groups were removed by low-temperature heat treatment. Coplanar-type organic thin-film transistors utilizing the hybrid dielectrics showed a low threshold voltage and nearly no shift in the threshold voltage due to their high capacitance and the absence of the hydroxyl groups.

UR - http://www.scopus.com/inward/record.url?scp=36348929829&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36348929829&partnerID=8YFLogxK

U2 - 10.1021/jp0761463

DO - 10.1021/jp0761463

M3 - Article

VL - 111

SP - 16083

EP - 16087

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 44

ER -