Photopatternable organosiloxane-based inorganic-organic SiO 2-ZrO2 hybrid dielectrics for organic thin film transistors

Sunho Jeong, Seonghee Lee, Dongjo Kim, Hyunjung Shin, Jooho Moon

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


A photopatternable and solution-processable thin gate dielectric for organic thin-film transistors has been fabricated here using an organosiloxane-based organic-inorganic hybrid material. Incorporation of a UV-sensitive functional group allowed us to directly obtain a high-resolution patterned gate dielectric using conventional photolithography. Uniform distribution of ZrO2 nanoclusters increased the dielectric constant of the hybrid material from which the hydroxyl groups were removed by low-temperature heat treatment. Coplanar-type organic thin-film transistors utilizing the hybrid dielectrics showed a low threshold voltage and nearly no shift in the threshold voltage due to their high capacitance and the absence of the hydroxyl groups.

Original languageEnglish
Pages (from-to)16083-16087
Number of pages5
JournalJournal of Physical Chemistry C
Issue number44
Publication statusPublished - 2007 Nov 8

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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