Photoresist-free fully self-patterned transparent amorphous oxide thin-film transistors obtained by sol-gel process

Hyun Soo Lim, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding Î 2-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. The chemically modified photosensitive sol-gels showed a high optical absorption at specific wavelengths due to the formation of metal chelate bonds. Photoreactions of the modified solutions enabled a photoresist-free process. Moreover, Zn-Sn-O with a high Sn ratio, which is hard to wet-etch using conventional photolithography due to its chemical durability, was easily patterned via the self-patterning process. Finally, we fabricated a solution-processed oxide TFT that included fully self-patterned electrodes and an active layer.

Original languageEnglish
Article number4544
JournalScientific reports
Volume4
DOIs
Publication statusPublished - 2014 Apr 1

Fingerprint

sol-gel processes
photoresists
transistors
gels
oxides
thin films
acetylacetone
photolithography
durability
chelates
optical absorption
electrodes
wavelengths
metals

All Science Journal Classification (ASJC) codes

  • General

Cite this

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abstract = "We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding {\^I} 2-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. The chemically modified photosensitive sol-gels showed a high optical absorption at specific wavelengths due to the formation of metal chelate bonds. Photoreactions of the modified solutions enabled a photoresist-free process. Moreover, Zn-Sn-O with a high Sn ratio, which is hard to wet-etch using conventional photolithography due to its chemical durability, was easily patterned via the self-patterning process. Finally, we fabricated a solution-processed oxide TFT that included fully self-patterned electrodes and an active layer.",
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Photoresist-free fully self-patterned transparent amorphous oxide thin-film transistors obtained by sol-gel process. / Lim, Hyun Soo; Rim, You Seung; Kim, Hyun Jae.

In: Scientific reports, Vol. 4, 4544, 01.04.2014.

Research output: Contribution to journalArticle

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