Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes

Y. S. Choi; J. Y. Lee; S. Im; S. J. Lee

doi:10.1116/1.1524152

Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes

Y. S. Choi, J. Y. Lee, S. Im, S. J. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Several n-ZnO/p-Si photodiodes were fabricated using rf-sputter deposition with various Ar/O₂ ratios at 480°C. The I-V measurements performed under continuous illumination on the photodiodes exhibited that a high responsivity of 0.286 A/W could be obtained from the photodiode prepared at an appropriate Ar/O₂ ratio of 6:1. The same diode also showed the least dark current leakage while the diode prepared at the high O₂ partial pressure (Ar/O₂=2:1) revealed the largest. Temporal response was measured up to 35 ns from the best n-ZnO/p-Si diodes with the least current leakage and high responsivity in measurements at the high modulation frequency of 1.5 MHz.

Original language	English
Pages (from-to)	2384-2387
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1524152
Publication status	Published - 2002 Nov

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Several n-ZnO/p-Si photodiodes were fabricated using rf-sputter deposition with various Ar/O2 ratios at 480°C. The I-V measurements performed under continuous illumination on the photodiodes exhibited that a high responsivity of 0.286 A/W could be obtained from the photodiode prepared at an appropriate Ar/O2 ratio of 6:1. The same diode also showed the least dark current leakage while the diode prepared at the high O2 partial pressure (Ar/O2=2:1) revealed the largest. Temporal response was measured up to 35 ns from the best n-ZnO/p-Si diodes with the least current leakage and high responsivity in measurements at the high modulation frequency of 1.5 MHz.",

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AU - Lee, J. Y.

AU - Im, S.

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Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes

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