Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes

Y. S. Choi, J. Y. Lee, S. Im, S. J. Lee

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Several n-ZnO/p-Si photodiodes were fabricated using rf-sputter deposition with various Ar/O2 ratios at 480°C. The I-V measurements performed under continuous illumination on the photodiodes exhibited that a high responsivity of 0.286 A/W could be obtained from the photodiode prepared at an appropriate Ar/O2 ratio of 6:1. The same diode also showed the least dark current leakage while the diode prepared at the high O2 partial pressure (Ar/O2=2:1) revealed the largest. Temporal response was measured up to 35 ns from the best n-ZnO/p-Si diodes with the least current leakage and high responsivity in measurements at the high modulation frequency of 1.5 MHz.

Original languageEnglish
Pages (from-to)2384-2387
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2002 Nov

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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