Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes

Y. S. Choi, J. Y. Lee, S. Im, S. J. Lee

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Several n-ZnO/p-Si photodiodes were fabricated using rf-sputter deposition with various Ar/O2 ratios at 480°C. The I-V measurements performed under continuous illumination on the photodiodes exhibited that a high responsivity of 0.286 A/W could be obtained from the photodiode prepared at an appropriate Ar/O2 ratio of 6:1. The same diode also showed the least dark current leakage while the diode prepared at the high O2 partial pressure (Ar/O2=2:1) revealed the largest. Temporal response was measured up to 35 ns from the best n-ZnO/p-Si diodes with the least current leakage and high responsivity in measurements at the high modulation frequency of 1.5 MHz.

Original languageEnglish
Pages (from-to)2384-2387
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

Photodiodes
photodiodes
Heterojunctions
heterojunctions
Diodes
diodes
leakage
Sputter deposition
Dark currents
Frequency modulation
dark current
Leakage currents
Partial pressure
frequency modulation
partial pressure
Lighting
illumination

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes. / Choi, Y. S.; Lee, J. Y.; Im, S.; Lee, S. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 01.11.2002, p. 2384-2387.

Research output: Contribution to journalArticle

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