Photoresponse characteristics of vertically aligned ZnO nanowires

J. P. Kar, S. N. Das, J. H. Choi, T. I. Lee, J. M. Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning of the nanowires was obtained by lift-off technique, where BaF2 film was used as a sacrificial layer. ZnO nanowires based UV detectors were fabricated using silicon microchannel. Nanowires with higher aspect ratio exhibited the highest on-off current ratio and less photoresponse time.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages951-952
Number of pages2
DOIs
Publication statusPublished - 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Kar, J. P., Das, S. N., Choi, J. H., Lee, T. I., & Myoung, J. M. (2010). Photoresponse characteristics of vertically aligned ZnO nanowires. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 951-952). [5425109] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5425109