The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.
|Number of pages||4|
|Publication status||Published - 2001 Jun|
|Event||Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France|
Duration: 2000 May 30 → 2000 Jun 2
Bibliographical noteFunding Information:
The work has been supported by the Brian Korea 21 project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering