Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

H. Y. Kim, Jae Hoon Kim, Y. J. Kim, K. H. Chae, C. N. Whang, J. H. Song, Seongil Im

Research output: Contribution to journalConference article

63 Citations (Scopus)

Abstract

The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
Publication statusPublished - 2001 Jan 1
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

Fingerprint

Diodes
diodes
Photoelectricity
Detectors
photoelectric effect
detectors
Photodiodes
Photocurrents
photodiodes
Sputtering
photocurrents
sputtering
Crystalline materials
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

Kim, H. Y. ; Kim, Jae Hoon ; Kim, Y. J. ; Chae, K. H. ; Whang, C. N. ; Song, J. H. ; Im, Seongil. / Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures. In: Optical Materials. 2001 ; Vol. 17, No. 1-2. pp. 141-144.
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abstract = "The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.",
author = "Kim, {H. Y.} and Kim, {Jae Hoon} and Kim, {Y. J.} and Chae, {K. H.} and Whang, {C. N.} and Song, {J. H.} and Seongil Im",
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Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures. / Kim, H. Y.; Kim, Jae Hoon; Kim, Y. J.; Chae, K. H.; Whang, C. N.; Song, J. H.; Im, Seongil.

In: Optical Materials, Vol. 17, No. 1-2, 01.01.2001, p. 141-144.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

AU - Kim, H. Y.

AU - Kim, Jae Hoon

AU - Kim, Y. J.

AU - Chae, K. H.

AU - Whang, C. N.

AU - Song, J. H.

AU - Im, Seongil

PY - 2001/1/1

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N2 - The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

AB - The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

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