Photosensitive Graphene P-N Junction Transistors and Ternary Inverters

Jun Beom Kim, Jinshu Li, Yongsuk Choi, Dongmok Whang, Euyheon Hwang, Jeong Ho Cho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigate the electric transport in a graphene-organic dye hybrid and the formation of p-n junctions. In the conventional approach, graphene p-n junctions are produced by using multiple electrostatic gates or local chemical doping, which produce different types of carriers in graphene. Instead of using multiple gates or typical chemical doping, a different approach to fabricate p-n junctions is proposed. The approach is based on optical gating of photosensitive dye molecules; this method can produce a well-defined sharp junction. The potential difference in the proposed p-n junction can be controlled by varying the optical power of incident light. A theoretical calculation based on the effective medium theory is performed to thoroughly explain the experimental data. The characteristic transport behavior of the photosensitive graphene p-n junction opens new possibilities for graphene-based devices, and we use the results to fabricate ternary inverters. Our strategy of building a simple hybrid p-n junction can further offer many opportunities in the near future of tuning it for other optoelectronic functionalities.

Original languageEnglish
Pages (from-to)12897-12903
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number15
DOIs
Publication statusPublished - 2018 Apr 18

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Graphite
Graphene
Transistors
Coloring Agents
Dyes
Doping (additives)
Optoelectronic devices
Electrostatics
Tuning
Molecules

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kim, Jun Beom ; Li, Jinshu ; Choi, Yongsuk ; Whang, Dongmok ; Hwang, Euyheon ; Cho, Jeong Ho. / Photosensitive Graphene P-N Junction Transistors and Ternary Inverters. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 15. pp. 12897-12903.
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Photosensitive Graphene P-N Junction Transistors and Ternary Inverters. / Kim, Jun Beom; Li, Jinshu; Choi, Yongsuk; Whang, Dongmok; Hwang, Euyheon; Cho, Jeong Ho.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 15, 18.04.2018, p. 12897-12903.

Research output: Contribution to journalArticle

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