We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0) (2007).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)