Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Keun Woo Lee, Kon Yi Heo, Hyun Jae Kim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

Original languageEnglish
Article number102112
JournalApplied Physics Letters
Volume94
Issue number10
DOIs
Publication statusPublished - 2009 Mar 24

Fingerprint

gallium oxides
photosensitivity
zinc oxides
indium
transistors
carbon nanotubes
thin films
photometers
signal to noise ratios
electrical properties
optical properties
defects
wavelengths

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{ceaaa80375e74035bc515b942f6651dc,
title = "Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors",
abstract = "We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.",
author = "Lee, {Keun Woo} and Heo, {Kon Yi} and Kim, {Hyun Jae}",
year = "2009",
month = "3",
day = "24",
doi = "10.1063/1.3098406",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors. / Lee, Keun Woo; Heo, Kon Yi; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 94, No. 10, 102112, 24.03.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

AU - Lee, Keun Woo

AU - Heo, Kon Yi

AU - Kim, Hyun Jae

PY - 2009/3/24

Y1 - 2009/3/24

N2 - We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

AB - We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

UR - http://www.scopus.com/inward/record.url?scp=62549121253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62549121253&partnerID=8YFLogxK

U2 - 10.1063/1.3098406

DO - 10.1063/1.3098406

M3 - Article

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102112

ER -