Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Keun Woo Lee, Kon Yi Heo, Hyun Jae Kim

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

Original languageEnglish
Article number102112
JournalApplied Physics Letters
Volume94
Issue number10
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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