Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems

Chang Soon Choi, Hyo Soon Kang, Woo Young Choi, Dae Hyun Kim, Kwang Seok Seo

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.

Original languageEnglish
Pages (from-to)256-262
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume53
Issue number1
DOIs
Publication statusPublished - 2005 Jan 1

Fingerprint

Phototransistors
phototransistors
High electron mobility transistors
high electron mobility transistors
Millimeter waves
Optoelectronic devices
millimeter waves
fibers
Fibers
harmonics
internal conversion
data transmission
Single mode fibers
Data communication systems

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Choi, Chang Soon ; Kang, Hyo Soon ; Choi, Woo Young ; Kim, Dae Hyun ; Seo, Kwang Seok. / Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems. In: IEEE Transactions on Microwave Theory and Techniques. 2005 ; Vol. 53, No. 1. pp. 256-262.
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Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems. / Choi, Chang Soon; Kang, Hyo Soon; Choi, Woo Young; Kim, Dae Hyun; Seo, Kwang Seok.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 53, No. 1, 01.01.2005, p. 256-262.

Research output: Contribution to journalArticle

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AB - Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.

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