Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors

K. B. Chung, C. N. Whang, M. H. Cho, C. J. Yim, D. H. Ko, Y. S. Kim, M. J. Kim, J. H. Lee, N. I. Lee

Research output: Contribution to journalArticle

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Abstract

Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO 2 and SiU 2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58%, 41%, and 25% for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO 2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO 2 and SiO 2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO 2 portion.

Original languageEnglish
Pages (from-to)607-613
Number of pages7
JournalJournal of the Korean Physical Society
Volume48
Issue number4
Publication statusPublished - 2006 Apr 1

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silicates
methylidyne
thin films
atomic layer epitaxy
charging
molecular structure
binding energy
cycles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{1e77c905c67643bba023d5ae5e28b279,
title = "Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors",
abstract = "Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO 2 and SiU 2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58{\%}, 41{\%}, and 25{\%} for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO 2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO 2 and SiO 2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO 2 portion.",
author = "Chung, {K. B.} and Whang, {C. N.} and Cho, {M. H.} and Yim, {C. J.} and Ko, {D. H.} and Kim, {Y. S.} and Kim, {M. J.} and Lee, {J. H.} and Lee, {N. I.}",
year = "2006",
month = "4",
day = "1",
language = "English",
volume = "48",
pages = "607--613",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. / Chung, K. B.; Whang, C. N.; Cho, M. H.; Yim, C. J.; Ko, D. H.; Kim, Y. S.; Kim, M. J.; Lee, J. H.; Lee, N. I.

In: Journal of the Korean Physical Society, Vol. 48, No. 4, 01.04.2006, p. 607-613.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors

AU - Chung, K. B.

AU - Whang, C. N.

AU - Cho, M. H.

AU - Yim, C. J.

AU - Ko, D. H.

AU - Kim, Y. S.

AU - Kim, M. J.

AU - Lee, J. H.

AU - Lee, N. I.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO 2 and SiU 2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58%, 41%, and 25% for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO 2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO 2 and SiO 2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO 2 portion.

AB - Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO 2 and SiU 2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58%, 41%, and 25% for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO 2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO 2 and SiO 2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO 2 portion.

UR - http://www.scopus.com/inward/record.url?scp=33646424139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646424139&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33646424139

VL - 48

SP - 607

EP - 613

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -