Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors

K. B. Chung, C. N. Whang, M. H. Cho, C. J. Yim, D. H. Ko, Y. S. Kim, M. J. Kim, J. H. Lee, N. I. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO 2 and SiU 2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58%, 41%, and 25% for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO 2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO 2 and SiO 2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO 2 portion.

Original languageEnglish
Pages (from-to)607-613
Number of pages7
JournalJournal of the Korean Physical Society
Volume48
Issue number4
Publication statusPublished - 2006 Apr

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH <sub>3</sub>)(C <sub>2</sub>H <sub>5</sub>)] <sub>4</sub> and SiH[N(CH <sub>3</sub>) <sub>2</sub>] <sub>3</sub> precursors'. Together they form a unique fingerprint.

  • Cite this