Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Hae yoon Kang; Min young Heo; Hyun chul Sohn

doi:10.1016/j.cap.2009.12.006

Physical and electrical characteristics of band-engineered Zr-silicate/SiO₂ stacks for tunnel barrier

Hae yoon Kang, Min young Heo, Hyun chul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, we investigated the physical properties of (ZrO₂)_x(SiO₂)_1-x such as band-gap, band-offset, structural stability, and the tunneling characteristics of (ZrO₂)_x(SiO₂)_1-x/SiO₂ tunnel barrier with total EOT of 4.5 nm for the application to charge trap memory devices. It was observed that the band-gap and band-offset of (ZrO₂)_x(SiO₂)_1-x can be controlled by changing the composition for (ZrO₂)_x(SiO₂)_1-x films. However, the sensitivity of band-gap and band-offset of (ZrO₂)_x(SiO₂)_1-x films on ZrO₂ content was minimal for the cycle ratio of ZrO₂:SiO₂ above 1:1. The Zr-silicate film with the ZrO₂:SiO₂ cycle ratio of 1:7 maintained amorphous even after annealing at 1050 °C. However, and Zr-silicate film with the ZrO₂:SiO₂ cycle ratio of 1:1 and 3:1 were crystallized after annealing at 950 °C and 850 °C, respectively. The band-engineered tunnel barrier of (ZrO₂)_x(SiO₂)_1-x/SiO₂ bi-layer showed enhanced tunnel efficiency at high gate bias, while showed smaller tunnel current at low gate bias than a single SiO₂ tunnel barrier of the similar EOT.

Original language	English
Pages (from-to)	e22-e26
Journal	Current Applied Physics
Volume	10
Issue number	1 SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2009.12.006
Publication status	Published - 2010 Jan

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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title = "Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier",

abstract = "In this work, we investigated the physical properties of (ZrO2)x(SiO2)1-x such as band-gap, band-offset, structural stability, and the tunneling characteristics of (ZrO2)x(SiO2)1-x/SiO2 tunnel barrier with total EOT of 4.5 nm for the application to charge trap memory devices. It was observed that the band-gap and band-offset of (ZrO2)x(SiO2)1-x can be controlled by changing the composition for (ZrO2)x(SiO2)1-x films. However, the sensitivity of band-gap and band-offset of (ZrO2)x(SiO2)1-x films on ZrO2 content was minimal for the cycle ratio of ZrO2:SiO2 above 1:1. The Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:7 maintained amorphous even after annealing at 1050 °C. However, and Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:1 and 3:1 were crystallized after annealing at 950 °C and 850 °C, respectively. The band-engineered tunnel barrier of (ZrO2)x(SiO2)1-x/SiO2 bi-layer showed enhanced tunnel efficiency at high gate bias, while showed smaller tunnel current at low gate bias than a single SiO2 tunnel barrier of the similar EOT.",

author = "Kang, {Hae yoon} and Heo, {Min young} and Sohn, {Hyun chul}",

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