Abstract
In this work, we investigated the physical properties of (ZrO2)x(SiO2)1-x such as band-gap, band-offset, structural stability, and the tunneling characteristics of (ZrO2)x(SiO2)1-x/SiO2 tunnel barrier with total EOT of 4.5 nm for the application to charge trap memory devices. It was observed that the band-gap and band-offset of (ZrO2)x(SiO2)1-x can be controlled by changing the composition for (ZrO2)x(SiO2)1-x films. However, the sensitivity of band-gap and band-offset of (ZrO2)x(SiO2)1-x films on ZrO2 content was minimal for the cycle ratio of ZrO2:SiO2 above 1:1. The Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:7 maintained amorphous even after annealing at 1050 °C. However, and Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:1 and 3:1 were crystallized after annealing at 950 °C and 850 °C, respectively. The band-engineered tunnel barrier of (ZrO2)x(SiO2)1-x/SiO2 bi-layer showed enhanced tunnel efficiency at high gate bias, while showed smaller tunnel current at low gate bias than a single SiO2 tunnel barrier of the similar EOT.
| Original language | English |
|---|---|
| Journal | Current Applied Physics |
| Volume | 10 |
| Issue number | 1 SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2010 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier. / Kang, Hae yoon; Heo, Min young; Sohn, Hyunchul.
In: Current Applied Physics, Vol. 10, No. 1 SUPPL. 1, 01.01.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier
AU - Kang, Hae yoon
AU - Heo, Min young
AU - Sohn, Hyunchul
PY - 2010/1/1
Y1 - 2010/1/1
N2 - In this work, we investigated the physical properties of (ZrO2)x(SiO2)1-x such as band-gap, band-offset, structural stability, and the tunneling characteristics of (ZrO2)x(SiO2)1-x/SiO2 tunnel barrier with total EOT of 4.5 nm for the application to charge trap memory devices. It was observed that the band-gap and band-offset of (ZrO2)x(SiO2)1-x can be controlled by changing the composition for (ZrO2)x(SiO2)1-x films. However, the sensitivity of band-gap and band-offset of (ZrO2)x(SiO2)1-x films on ZrO2 content was minimal for the cycle ratio of ZrO2:SiO2 above 1:1. The Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:7 maintained amorphous even after annealing at 1050 °C. However, and Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:1 and 3:1 were crystallized after annealing at 950 °C and 850 °C, respectively. The band-engineered tunnel barrier of (ZrO2)x(SiO2)1-x/SiO2 bi-layer showed enhanced tunnel efficiency at high gate bias, while showed smaller tunnel current at low gate bias than a single SiO2 tunnel barrier of the similar EOT.
AB - In this work, we investigated the physical properties of (ZrO2)x(SiO2)1-x such as band-gap, band-offset, structural stability, and the tunneling characteristics of (ZrO2)x(SiO2)1-x/SiO2 tunnel barrier with total EOT of 4.5 nm for the application to charge trap memory devices. It was observed that the band-gap and band-offset of (ZrO2)x(SiO2)1-x can be controlled by changing the composition for (ZrO2)x(SiO2)1-x films. However, the sensitivity of band-gap and band-offset of (ZrO2)x(SiO2)1-x films on ZrO2 content was minimal for the cycle ratio of ZrO2:SiO2 above 1:1. The Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:7 maintained amorphous even after annealing at 1050 °C. However, and Zr-silicate film with the ZrO2:SiO2 cycle ratio of 1:1 and 3:1 were crystallized after annealing at 950 °C and 850 °C, respectively. The band-engineered tunnel barrier of (ZrO2)x(SiO2)1-x/SiO2 bi-layer showed enhanced tunnel efficiency at high gate bias, while showed smaller tunnel current at low gate bias than a single SiO2 tunnel barrier of the similar EOT.
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U2 - 10.1016/j.cap.2009.12.006
DO - 10.1016/j.cap.2009.12.006
M3 - Article
VL - 10
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 1 SUPPL. 1
ER -