Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials

J. H. Kim, D. S. Byeon, Dae Hong Ko, J. H. Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalThin Solid Films
Volume659
DOIs
Publication statusPublished - 2018 Aug 1

Fingerprint

phase change materials
Phase change materials
Crystallization
crystallization
Phase change memory
Crystalline materials
Pulse code modulation
Sheet resistance
programming
threshold currents
Phase separation
Electric properties
Energy gap
Activation energy
Physical properties
physical properties
Crystal structure
grain size
electrical properties
high speed

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.{\%} to 30 at.{\%}, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.",
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Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials . / Kim, J. H.; Byeon, D. S.; Ko, Dae Hong; Park, J. H.

In: Thin Solid Films, Vol. 659, 01.08.2018, p. 1-6.

Research output: Contribution to journalArticle

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