Abstract
In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 659 |
| DOIs | |
| Publication status | Published - 2018 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials . / Kim, J. H.; Byeon, D. S.; Ko, Dae Hong; Park, J. H.
In: Thin Solid Films, Vol. 659, 01.08.2018, p. 1-6.Research output: Contribution to journal › Article
TY - JOUR
T1 - Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials
AU - Kim, J. H.
AU - Byeon, D. S.
AU - Ko, Dae Hong
AU - Park, J. H.
PY - 2018/8/1
Y1 - 2018/8/1
N2 - In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.
AB - In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.
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UR - http://www.scopus.com/inward/citedby.url?scp=85047311214&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2018.05.034
DO - 10.1016/j.tsf.2018.05.034
M3 - Article
AN - SCOPUS:85047311214
VL - 659
SP - 1
EP - 6
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -