Physical and electrical degradation of ZrO 2 thin films with aluminum electrodes

Seok Woo Nam, Jung Ho Yoo, Suheun Nam, Dae Hong Ko, Ja Hum Ku, Cheol Woong Yang

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Zirconium oxide thin films were deposited on p-type (100) silicon wafers by reactive d.c. magnetron sputtering. The as-deposited ZrO 2 films at the power of 300 W and at room temperature were amorphous and the ZrO 2 films became polycrystalline with both the monoclinic and tetragonal phases after post-annealing at 450°C in N 2 ambient. The ZrO 2 films with Al electrode had the interfacial amorphous Al-O-containing layer, which was formed by their interaction, but the films with inactive electrodes such as Pt had no additional interfacial layer. The value of the capacitance equivalent thickness (CET) for ZrO 2 film with Al electrode was increased to about 12.4 Å compared with the film with Pt electrode due to the additional interfacial layer between Al and ZrO 2 film. The difference of flat band voltage (ΔV FB ) between the films with two different electrodes was about 1.2 V because of their work function difference.

Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume102
Issue number1-3
DOIs
Publication statusPublished - 2003 Sep 15
EventE-MRS 2002 Symposium E - Strasbourg, France
Duration: 2002 Jun 182002 Jun 21

Fingerprint

Aluminum
degradation
aluminum
Degradation
Thin films
Electrodes
electrodes
thin films
Reactive sputtering
Silicon wafers
zirconium oxides
Zirconia
Magnetron sputtering
Oxide films
magnetron sputtering
Capacitance
capacitance
wafers
Annealing
annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nam, Seok Woo ; Yoo, Jung Ho ; Nam, Suheun ; Ko, Dae Hong ; Ku, Ja Hum ; Yang, Cheol Woong. / Physical and electrical degradation of ZrO 2 thin films with aluminum electrodes In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2003 ; Vol. 102, No. 1-3. pp. 108-112.
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abstract = "Zirconium oxide thin films were deposited on p-type (100) silicon wafers by reactive d.c. magnetron sputtering. The as-deposited ZrO 2 films at the power of 300 W and at room temperature were amorphous and the ZrO 2 films became polycrystalline with both the monoclinic and tetragonal phases after post-annealing at 450°C in N 2 ambient. The ZrO 2 films with Al electrode had the interfacial amorphous Al-O-containing layer, which was formed by their interaction, but the films with inactive electrodes such as Pt had no additional interfacial layer. The value of the capacitance equivalent thickness (CET) for ZrO 2 film with Al electrode was increased to about 12.4 {\AA} compared with the film with Pt electrode due to the additional interfacial layer between Al and ZrO 2 film. The difference of flat band voltage (ΔV FB ) between the films with two different electrodes was about 1.2 V because of their work function difference.",
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Physical and electrical degradation of ZrO 2 thin films with aluminum electrodes . / Nam, Seok Woo; Yoo, Jung Ho; Nam, Suheun; Ko, Dae Hong; Ku, Ja Hum; Yang, Cheol Woong.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 102, No. 1-3, 15.09.2003, p. 108-112.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Physical and electrical degradation of ZrO 2 thin films with aluminum electrodes

AU - Nam, Seok Woo

AU - Yoo, Jung Ho

AU - Nam, Suheun

AU - Ko, Dae Hong

AU - Ku, Ja Hum

AU - Yang, Cheol Woong

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N2 - Zirconium oxide thin films were deposited on p-type (100) silicon wafers by reactive d.c. magnetron sputtering. The as-deposited ZrO 2 films at the power of 300 W and at room temperature were amorphous and the ZrO 2 films became polycrystalline with both the monoclinic and tetragonal phases after post-annealing at 450°C in N 2 ambient. The ZrO 2 films with Al electrode had the interfacial amorphous Al-O-containing layer, which was formed by their interaction, but the films with inactive electrodes such as Pt had no additional interfacial layer. The value of the capacitance equivalent thickness (CET) for ZrO 2 film with Al electrode was increased to about 12.4 Å compared with the film with Pt electrode due to the additional interfacial layer between Al and ZrO 2 film. The difference of flat band voltage (ΔV FB ) between the films with two different electrodes was about 1.2 V because of their work function difference.

AB - Zirconium oxide thin films were deposited on p-type (100) silicon wafers by reactive d.c. magnetron sputtering. The as-deposited ZrO 2 films at the power of 300 W and at room temperature were amorphous and the ZrO 2 films became polycrystalline with both the monoclinic and tetragonal phases after post-annealing at 450°C in N 2 ambient. The ZrO 2 films with Al electrode had the interfacial amorphous Al-O-containing layer, which was formed by their interaction, but the films with inactive electrodes such as Pt had no additional interfacial layer. The value of the capacitance equivalent thickness (CET) for ZrO 2 film with Al electrode was increased to about 12.4 Å compared with the film with Pt electrode due to the additional interfacial layer between Al and ZrO 2 film. The difference of flat band voltage (ΔV FB ) between the films with two different electrodes was about 1.2 V because of their work function difference.

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