Zirconium oxide thin films were deposited on p-type (100) silicon wafers by reactive d.c. magnetron sputtering. The as-deposited ZrO2 films at the power of 300 W and at room temperature were amorphous and the ZrO 2 films became polycrystalline with both the monoclinic and tetragonal phases after post-annealing at 450°C in N2 ambient. The ZrO2 films with Al electrode had the interfacial amorphous Al-O-containing layer, which was formed by their interaction, but the films with inactive electrodes such as Pt had no additional interfacial layer. The value of the capacitance equivalent thickness (CET) for ZrO2 film with Al electrode was increased to about 12.4 Å compared with the film with Pt electrode due to the additional interfacial layer between Al and ZrO2 film. The difference of flat band voltage (ΔV FB) between the films with two different electrodes was about 1.2 V because of their work function difference.
|Number of pages||5|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Publication status||Published - 2003 Sep 15|
|Event||E-MRS 2002 Symposium E - Strasbourg, France|
Duration: 2002 Jun 18 → 2002 Jun 21
Bibliographical noteFunding Information:
This work is supported by the BK21 and grant No. ROI-2001-00271 from Korean Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering