TY - JOUR
T1 - Physical and electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacks for nonvolatile memory applications
AU - Oh, Jinho
AU - Na, Heedo
AU - Mok, In Su
AU - Kim, Jonggi
AU - Lee, Kyumin
AU - Sohn, Hyunchul
PY - 2012/9
Y1 - 2012/9
N2 - In our study, the physical properties of (TiO 2) x (SiO 2) 1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO 2) x (SiO 2) 1-x can be controlled by adjustment in the composition of the (TiO 2) x (SiO 2) 1-x films. Ti-silicate film with TiO 2: SiO 2 cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier was larger than that of a single SiO 2 barrier under a higher external bias, while the tunneling current of a SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO 2/(TiO 2) x (SiO 2) 1-x is slightly larger than that for single SiO 2.
AB - In our study, the physical properties of (TiO 2) x (SiO 2) 1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO 2) x (SiO 2) 1-x can be controlled by adjustment in the composition of the (TiO 2) x (SiO 2) 1-x films. Ti-silicate film with TiO 2: SiO 2 cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier was larger than that of a single SiO 2 barrier under a higher external bias, while the tunneling current of a SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO 2/(TiO 2) x (SiO 2) 1-x is slightly larger than that for single SiO 2.
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U2 - 10.1007/s00339-012-6950-2
DO - 10.1007/s00339-012-6950-2
M3 - Article
AN - SCOPUS:84865377806
VL - 108
SP - 679
EP - 684
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 3
ER -