Physical and electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacks for nonvolatile memory applications

Jinho Oh, Heedo Na, In Su Mok, Jonggi Kim, Kyumin Lee, Hyunchul Sohn

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3 Citations (Scopus)

Abstract

In our study, the physical properties of (TiO 2) x (SiO 2) 1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO 2) x (SiO 2) 1-x can be controlled by adjustment in the composition of the (TiO 2) x (SiO 2) 1-x films. Ti-silicate film with TiO 2: SiO 2 cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier was larger than that of a single SiO 2 barrier under a higher external bias, while the tunneling current of a SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO 2/(TiO 2) x (SiO 2) 1-x is slightly larger than that for single SiO 2.

Original languageEnglish
Pages (from-to)679-684
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume108
Issue number3
DOIs
Publication statusPublished - 2012 Sep 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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