Polycrystalline (poly) Si1-xGex films have been suggested as a promising alternative to the currently employed poly silicon gate electrode for complementary metal oxide semiconductor field effect transistor technology due to lower resistivity, less boron penetration, and less gate depletion effect than that of poly Si gates. We investigated the deposition characteristics and physical properties of poly Si1-xGex films using SiH4 as deposition source gases in single-wafer-type low pressure chemical vapor deposition (LPCVD) system and the electrical properties of P+ MOS capacitors with the poly Si1-xGex/45 Å SiO2 gate stack. Deposition rate as well as Ge content of poly Si1-xGex films shows the large increase with the addition of a small fraction of GeH4, while, above critical GeH4 flux, it is slightly changed. In addition, the Ge content in poly Si1-xGex films decreased with an increase in deposition temperature. The flatband voltage of the poly Si0.4Ge0.6 gate stack decreased by 0.3 V and gate depletion effect of poly Si0.4Ge0.6 gate stack was reduced by 18% as compared to that of the poly Si gate stack. In addition, the charge to breakdown (QBD) of the poly Si0.85Ge0.15 gate stack was higher than that of poly Si gate stack.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry