Physical and electrical properties of W/MNx/poly-Si1-xGex (x = 0, 0.2, 0.6) gates stack with post-thermal process

S. K. Kang, B. G. Min, J. J. Kim, D. H. Ko, H. B. Kang, C. W. Yang, K. Y. Lim, T. H. Ahn

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