Heteroepitaxial Y 2O 3 films on Si(100) were grown by the ionized cluster beam (ICB) deposition technique. The composition of the deposited film was investigated using Rutherford backscattering spectroscopy. The composition ratios of the Y 2O 3 films changed with changes in the deposition conditions. In the case of the film which was fabricated under optimum conditions, the ratio of Y to O was 1 to 1.55. The crystal orientational relation of the films deposited on a Si (100) substrate was investigated by using reflection high-energy electron diffraction. We found that the orientation of the deposited film changed mainly due to changes of the substrate temperature and the cluster acceleration energy. Y 2O 3 films were epitaxially grown above 800°C without acceleration, and heteroepitaxial growth of Y 2O 3 films on Si(100) substrates was possible with a 5-kV acceleration voltage above 650°C. The epitaxial relationship between Y 2O 3 and Si(100) was Y 2O 3(110)//Si(100) and Y 2O 3//Si or Y 2O 3(110)//Si(100) and Y 2O 3//Si. The I-V characteristics of Al/Y 2O 3/Si metal-insulator-semiconductor devices were investigated. After thermal annealing in an oxygen ambient, the measured value of the breakdown strength was more than 3 MV/cm and the leakage current was lower than 1 × 10 -10 A/cm 2.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 1997 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)