Physically Transient Field-Effect Transistors Based on Black Phosphorus

Min Kyu Song, Seok Daniel Namgung, Taehoon Sung, Ah Jin Cho, Jaehun Lee, Misong Ju, Ki Tae Nam, Yoon Sik Lee, Jang Yeon Kwon

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Black phosphorus (BP) has shown great potential as a semiconductor material beyond graphene and MoS 2 because of its intrinsic band gap and high mobility. Moreover, the biocompatibility of the final biodegradation products of BP has led to extensive research on biomedical applications. Herein, physically transient field-effect transistors (FETs) based on black phosphorus have been demonstrated using peptide insulator as a gate dielectric layer. The fabricated devices show high hole mobility up to 468 cm 2 V -1 s -1 and on-off current ratio over 10 3 . The combined use of black phosphorus, peptide, and molybdenum provides rapid disappearance of the devices within 36 h. Dissolution kinetics and cytotoxicity of black phosphorus are assessed to clarify its availability to be applied in transient electronics. This work provides transient FETs with high degradability and high performance based on biocompatible black phosphorus.

Original languageEnglish
Pages (from-to)42630-42636
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number49
DOIs
Publication statusPublished - 2018 Dec 12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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  • Cite this

    Song, M. K., Namgung, S. D., Sung, T., Cho, A. J., Lee, J., Ju, M., Nam, K. T., Lee, Y. S., & Kwon, J. Y. (2018). Physically Transient Field-Effect Transistors Based on Black Phosphorus. ACS Applied Materials and Interfaces, 10(49), 42630-42636. https://doi.org/10.1021/acsami.8b15015