Picosecond pulse generation by gain switched 650 nm InGaAlP Fabry Perot laser diode

Kwang H. Oh, U. C. Paek, Dug Y. Kim

Research output: Contribution to conferencePaper

Abstract

Various characteristics of a gain switched 650 nm InGaAlP Fabry Perot laser diode was investigated in time domain and wavelength domain for ultra fast optical transmission systems. A voltage controlled oscillator (VCO) was used as electric signal source to generate a sinusoidal RF signal. An electronic amplifier with 20dB gain was used just after the VCO. The optical spectrum for the gain switched operation showed more modes and broadened envelope due to chirping effect during a pulse generation period. The shortest optical pulse was found to be 33.279 psec with the laser diode.

Original languageEnglish
PagesII196-II197
Publication statusPublished - 2001 Dec 1
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 2001 Jul 152001 Jul 19

Other

Other4th Pacific Rim Conference on Lasers and Electro-Optics
CountryJapan
CityChiba
Period01/7/1501/7/19

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Oh, K. H., Paek, U. C., & Kim, D. Y. (2001). Picosecond pulse generation by gain switched 650 nm InGaAlP Fabry Perot laser diode. II196-II197. Paper presented at 4th Pacific Rim Conference on Lasers and Electro-Optics, Chiba, Japan.