Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique

Kwang H. Oh; N. Hwang; J. S. Koh; Dug Y. Kim

doi:10.1002/mop.10517

Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique

Kwang H. Oh, N. Hwang, J. S. Koh, Dug Y. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Various characteristics of a gain-switched InGaAlP Fabry-Perot semiconductor laser operating with a center wavelength of 650 nm for short-distance ultra-fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser.

Original language	English
Pages (from-to)	65-67
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1002/mop.10517
Publication status	Published - 2002 Oct 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.10517

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title = "Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique",

abstract = "Various characteristics of a gain-switched InGaAlP Fabry-Perot semiconductor laser operating with a center wavelength of 650 nm for short-distance ultra-fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser.",

author = "Oh, {Kwang H.} and N. Hwang and Koh, {J. S.} and Kim, {Dug Y.}",

year = "2002",

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T1 - Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique

AU - Oh, Kwang H.

AU - Hwang, N.

AU - Koh, J. S.

AU - Kim, Dug Y.

PY - 2002/10/5

Y1 - 2002/10/5

N2 - Various characteristics of a gain-switched InGaAlP Fabry-Perot semiconductor laser operating with a center wavelength of 650 nm for short-distance ultra-fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser.

AB - Various characteristics of a gain-switched InGaAlP Fabry-Perot semiconductor laser operating with a center wavelength of 650 nm for short-distance ultra-fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser.

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

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Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique

Abstract

All Science Journal Classification (ASJC) codes

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