Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique

Kwang H. Oh, N. Hwang, J. S. Koh, Dug Y. Kim

Research output: Contribution to journalArticle

Abstract

Various characteristics of a gain-switched InGaAlP Fabry-Perot semiconductor laser operating with a center wavelength of 650 nm for short-distance ultra-fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser.

Original languageEnglish
Pages (from-to)65-67
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume35
Issue number1
DOIs
Publication statusPublished - 2002 Oct 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique'. Together they form a unique fingerprint.

  • Cite this