Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli

Qijun Sun, Dong Hae Ho, Yongsuk Choi, Caofeng Pan, Do Hwan Kim, Zhong Lin Wang, Jeong Ho Cho

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 10 3 , multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.

Original languageEnglish
Pages (from-to)11037-11043
Number of pages7
JournalACS Nano
Volume10
Issue number12
DOIs
Publication statusPublished - 2016 Dec 27

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stimuli
Data storage equipment
data storage
programming
Computer programming
robots
field effect transistors
Field effect transistors
gels
Skin
cycles
Electric power utilization
Gels
electric potential
Robots
Ions
electronics
ions
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Sun, Qijun ; Ho, Dong Hae ; Choi, Yongsuk ; Pan, Caofeng ; Kim, Do Hwan ; Wang, Zhong Lin ; Cho, Jeong Ho. / Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli. In: ACS Nano. 2016 ; Vol. 10, No. 12. pp. 11037-11043.
@article{fbc877a641b647a6afec46ba0ddf15a4,
title = "Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli",
abstract = "We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 10 3 , multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.",
author = "Qijun Sun and Ho, {Dong Hae} and Yongsuk Choi and Caofeng Pan and Kim, {Do Hwan} and Wang, {Zhong Lin} and Cho, {Jeong Ho}",
year = "2016",
month = "12",
day = "27",
doi = "10.1021/acsnano.6b05895",
language = "English",
volume = "10",
pages = "11037--11043",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "12",

}

Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli. / Sun, Qijun; Ho, Dong Hae; Choi, Yongsuk; Pan, Caofeng; Kim, Do Hwan; Wang, Zhong Lin; Cho, Jeong Ho.

In: ACS Nano, Vol. 10, No. 12, 27.12.2016, p. 11037-11043.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli

AU - Sun, Qijun

AU - Ho, Dong Hae

AU - Choi, Yongsuk

AU - Pan, Caofeng

AU - Kim, Do Hwan

AU - Wang, Zhong Lin

AU - Cho, Jeong Ho

PY - 2016/12/27

Y1 - 2016/12/27

N2 - We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 10 3 , multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.

AB - We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 10 3 , multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.

UR - http://www.scopus.com/inward/record.url?scp=85008194519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008194519&partnerID=8YFLogxK

U2 - 10.1021/acsnano.6b05895

DO - 10.1021/acsnano.6b05895

M3 - Article

AN - SCOPUS:85008194519

VL - 10

SP - 11037

EP - 11043

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 12

ER -