Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system, respectively. Compared to Co sputtering deposition, which provides a linear growth, the growth of PE-ALD Co varied on each substrate with increasing number of ALD cycles because of the surface-sensitive island growth. From the electrical properties, PE-ALD Co on a Ta substrate showed a growth mode different from those on other substrates. This difference was explained by the existence of a highly resistive interlayer, which was also directly observed via transmission electron microscopy. Since Ta was directly exposed to N2/H2 plasma during an initial island growth stage of Co, a Ta nitride interlayer was formed between Co and Ta.
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program (industrial strategic technology development program, development of reliable fine-pitch metallization technologies) funded by the Ministry of Knowledge Economy (No. 10035430 ), and this research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2014R1A1A2059845 ). Also, This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning .( 2009-0082580 ).
© 2015 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry