Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Jusang Park, Han Bo Ram Lee, Doyoung Kim, Jaehong Yoon, Clement Lansalot, Julien Gatineau, Henri Chevrel, Hyungjun Kim

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14 Citations (Scopus)

Abstract

Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalJournal of Energy Chemistry
Volume22
Issue number3
DOIs
Publication statusPublished - 2013 May

All Science Journal Classification (ASJC) codes

  • Fuel Technology
  • Energy Engineering and Power Technology
  • Energy (miscellaneous)
  • Electrochemistry

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    Park, J., Lee, H. B. R., Kim, D., Yoon, J., Lansalot, C., Gatineau, J., Chevrel, H., & Kim, H. (2013). Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor. Journal of Energy Chemistry, 22(3), 403-407. https://doi.org/10.1016/S2095-4956(13)60052-2