Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program Industrial Strategic Technology Development Program (10035430), Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE, Korea. The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2.
All Science Journal Classification (ASJC) codes
- Fuel Technology
- Energy Engineering and Power Technology
- Energy (miscellaneous)