Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Jusang Park; Han Bo Ram Lee; Doyoung Kim; Jaehong Yoon; Clement Lansalot; Julien Gatineau; Henri Chevrel; Hyungjun Kim

doi:10.1016/S2095-4956(13)60052-2

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)₂ precursor

Jusang Park, Han Bo Ram Lee, Doyoung Kim, Jaehong Yoon, Clement Lansalot, Julien Gatineau, Henri Chevrel, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)₂, and NH₃ or H₂ or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)₂) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp₂) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

Original language	English
Pages (from-to)	403-407
Number of pages	5
Journal	Journal of Energy Chemistry
Volume	22
Issue number	3
DOIs	https://doi.org/10.1016/S2095-4956(13)60052-2
Publication status	Published - 2013 May

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program Industrial Strategic Technology Development Program (10035430), Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE, Korea. The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2.

All Science Journal Classification (ASJC) codes

Fuel Technology
Energy Engineering and Power Technology
Energy (miscellaneous)
Electrochemistry

Access to Document

10.1016/S2095-4956(13)60052-2

Cite this

@article{960ba82fe2904ddca9babfaf078a5062,

title = "Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor",

abstract = "Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).",

author = "Jusang Park and Lee, {Han Bo Ram} and Doyoung Kim and Jaehong Yoon and Clement Lansalot and Julien Gatineau and Henri Chevrel and Hyungjun Kim",

note = "Funding Information: This work was supported by the Technology Innovation Program Industrial Strategic Technology Development Program (10035430), Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE, Korea. The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2. ",

year = "2013",

month = may,

doi = "10.1016/S2095-4956(13)60052-2",

language = "English",

volume = "22",

pages = "403--407",

journal = "Journal of Energy Chemistry",

issn = "2095-4956",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

AU - Park, Jusang

AU - Lee, Han Bo Ram

AU - Kim, Doyoung

AU - Yoon, Jaehong

AU - Lansalot, Clement

AU - Gatineau, Julien

AU - Chevrel, Henri

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Technology Innovation Program Industrial Strategic Technology Development Program (10035430), Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE, Korea. The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2.

PY - 2013/5

Y1 - 2013/5

N2 - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

AB - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

UR - http://www.scopus.com/inward/record.url?scp=84879868413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879868413&partnerID=8YFLogxK

U2 - 10.1016/S2095-4956(13)60052-2

DO - 10.1016/S2095-4956(13)60052-2

M3 - Article

AN - SCOPUS:84879868413

VL - 22

SP - 403

EP - 407

JO - Journal of Energy Chemistry

JF - Journal of Energy Chemistry

SN - 2095-4956

IS - 3

ER -