Abstract
Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).
| Original language | English |
|---|---|
| Pages (from-to) | 403-407 |
| Number of pages | 5 |
| Journal | Journal of Energy Chemistry |
| Volume | 22 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Fuel Technology
- Energy Engineering and Power Technology
- Energy (miscellaneous)
- Electrochemistry
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Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor. / Park, Jusang; Lee, Han Bo Ram; Kim, Doyoung; Yoon, Jaehong; Lansalot, Clement; Gatineau, Julien; Chevrel, Henri; Kim, Hyungjun.
In: Journal of Energy Chemistry, Vol. 22, No. 3, 01.01.2013, p. 403-407.Research output: Contribution to journal › Article
TY - JOUR
T1 - Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
AU - Park, Jusang
AU - Lee, Han Bo Ram
AU - Kim, Doyoung
AU - Yoon, Jaehong
AU - Lansalot, Clement
AU - Gatineau, Julien
AU - Chevrel, Henri
AU - Kim, Hyungjun
PY - 2013/1/1
Y1 - 2013/1/1
N2 - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).
AB - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).
UR - http://www.scopus.com/inward/record.url?scp=84879868413&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879868413&partnerID=8YFLogxK
U2 - 10.1016/S2095-4956(13)60052-2
DO - 10.1016/S2095-4956(13)60052-2
M3 - Article
VL - 22
SP - 403
EP - 407
JO - Journal of Energy Chemistry
JF - Journal of Energy Chemistry
SN - 2095-4956
IS - 3
ER -