Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Jusang Park, Han Bo Ram Lee, Doyoung Kim, Jaehong Yoon, Clement Lansalot, Julien Gatineau, Henri Chevrel, Hyungjun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalJournal of Energy Chemistry
Volume22
Issue number3
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Atomic layer deposition
Cobalt
Plasmas
Growth temperature
Metals

All Science Journal Classification (ASJC) codes

  • Fuel Technology
  • Energy Engineering and Power Technology
  • Energy (miscellaneous)
  • Electrochemistry

Cite this

Park, Jusang ; Lee, Han Bo Ram ; Kim, Doyoung ; Yoon, Jaehong ; Lansalot, Clement ; Gatineau, Julien ; Chevrel, Henri ; Kim, Hyungjun. / Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor. In: Journal of Energy Chemistry. 2013 ; Vol. 22, No. 3. pp. 403-407.
@article{960ba82fe2904ddca9babfaf078a5062,
title = "Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor",
abstract = "Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).",
author = "Jusang Park and Lee, {Han Bo Ram} and Doyoung Kim and Jaehong Yoon and Clement Lansalot and Julien Gatineau and Henri Chevrel and Hyungjun Kim",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/S2095-4956(13)60052-2",
language = "English",
volume = "22",
pages = "403--407",
journal = "Journal of Energy Chemistry",
issn = "2095-4956",
publisher = "Elsevier BV",
number = "3",

}

Park, J, Lee, HBR, Kim, D, Yoon, J, Lansalot, C, Gatineau, J, Chevrel, H & Kim, H 2013, 'Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor', Journal of Energy Chemistry, vol. 22, no. 3, pp. 403-407. https://doi.org/10.1016/S2095-4956(13)60052-2

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor. / Park, Jusang; Lee, Han Bo Ram; Kim, Doyoung; Yoon, Jaehong; Lansalot, Clement; Gatineau, Julien; Chevrel, Henri; Kim, Hyungjun.

In: Journal of Energy Chemistry, Vol. 22, No. 3, 01.01.2013, p. 403-407.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

AU - Park, Jusang

AU - Lee, Han Bo Ram

AU - Kim, Doyoung

AU - Yoon, Jaehong

AU - Lansalot, Clement

AU - Gatineau, Julien

AU - Chevrel, Henri

AU - Kim, Hyungjun

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

AB - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

UR - http://www.scopus.com/inward/record.url?scp=84879868413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879868413&partnerID=8YFLogxK

U2 - 10.1016/S2095-4956(13)60052-2

DO - 10.1016/S2095-4956(13)60052-2

M3 - Article

VL - 22

SP - 403

EP - 407

JO - Journal of Energy Chemistry

JF - Journal of Energy Chemistry

SN - 2095-4956

IS - 3

ER -