Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Jusang Park; Han Bo Ram Lee; Doyoung Kim; Jaehong Yoon; Clement Lansalot; Julien Gatineau; Henri Chevrel; Hyungjun Kim

doi:10.1016/S2095-4956(13)60052-2

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)₂ precursor

Jusang Park, Han Bo Ram Lee, Doyoung Kim, Jaehong Yoon, Clement Lansalot, Julien Gatineau, Henri Chevrel, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)₂, and NH₃ or H₂ or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)₂) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp₂) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

Original language	English
Pages (from-to)	403-407
Number of pages	5
Journal	Journal of Energy Chemistry
Volume	22
Issue number	3
DOIs	https://doi.org/10.1016/S2095-4956(13)60052-2
Publication status	Published - 2013 May

All Science Journal Classification (ASJC) codes

Fuel Technology
Energy Engineering and Power Technology
Energy (miscellaneous)
Electrochemistry

Access to Document

10.1016/S2095-4956(13)60052-2

Fingerprint Dive into the research topics of 'Plasma-enhanced atomic layer deposition of Co using Co(MeCp)<sub>2</sub> precursor'. Together they form a unique fingerprint.

Cite this

Park, J., Lee, H. B. R., Kim, D., Yoon, J., Lansalot, C., Gatineau, J., Chevrel, H., & Kim, H. (2013). Plasma-enhanced atomic layer deposition of Co using Co(MeCp)₂ precursor. Journal of Energy Chemistry, 22(3), 403-407. https://doi.org/10.1016/S2095-4956(13)60052-2

@article{960ba82fe2904ddca9babfaf078a5062,

title = "Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor",

abstract = "Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).",

author = "Jusang Park and Lee, {Han Bo Ram} and Doyoung Kim and Jaehong Yoon and Clement Lansalot and Julien Gatineau and Henri Chevrel and Hyungjun Kim",

year = "2013",

month = may,

doi = "10.1016/S2095-4956(13)60052-2",

language = "English",

volume = "22",

pages = "403--407",

journal = "Journal of Energy Chemistry",

issn = "2095-4956",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

AU - Park, Jusang

AU - Lee, Han Bo Ram

AU - Kim, Doyoung

AU - Yoon, Jaehong

AU - Lansalot, Clement

AU - Gatineau, Julien

AU - Chevrel, Henri

AU - Kim, Hyungjun

PY - 2013/5

Y1 - 2013/5

N2 - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

AB - Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD)was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).

UR - http://www.scopus.com/inward/record.url?scp=84879868413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879868413&partnerID=8YFLogxK

U2 - 10.1016/S2095-4956(13)60052-2

DO - 10.1016/S2095-4956(13)60052-2

M3 - Article

AN - SCOPUS:84879868413

VL - 22

SP - 403

EP - 407

JO - Journal of Energy Chemistry

JF - Journal of Energy Chemistry

SN - 2095-4956

IS - 3

ER -