Plasma-enhanced atomic layer deposition of cobalt using cyclopentadienyl isopropyl acetamidinato-cobalt as a precursor

Jae Min Kim, Han Bo Ram Lee, Clement Lansalot, Christian Dussarrat, Julien Gatineau, Hyungjun Kim

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Cobalt plasma-enhanced atomic layer deposition (PE-ALD) using cyclopentadienyl isopropyl acetamidinato-cobalt [Co(CpAMD)] precursor and NH3 plasma was investigated. The PE-ALD Co thin films were produced well on both SiO2 and Si(001) substrates. The deposition characteristics and films properties such as resistivity, chemical bonding states and quantitative impurity level contents were investigated. Especially, Co deposition using this precursor was possible at very low growth temperature as low as 100 °C, which enable the deposition on polymer-based substrate. We demonstrate that this low growth temperature PE-ALD can be applicable to patterning of Co film by lift-off method, which was realized by direct deposition of Co on photoresist patterned substrate.

Original languageEnglish
Pages (from-to)05FA101-05FA105
JournalJapanese journal of applied physics
Volume49
Issue number5 PART 3
DOIs
Publication statusPublished - 2010 May 1

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Atomic layer deposition
atomic layer epitaxy
Cobalt
cobalt
Plasmas
Growth temperature
Substrates
plasma temperature
Photoresists
photoresists
Impurities
Thin films
impurities
electrical resistivity
polymers
Polymers
thin films
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, Jae Min ; Lee, Han Bo Ram ; Lansalot, Clement ; Dussarrat, Christian ; Gatineau, Julien ; Kim, Hyungjun. / Plasma-enhanced atomic layer deposition of cobalt using cyclopentadienyl isopropyl acetamidinato-cobalt as a precursor. In: Japanese journal of applied physics. 2010 ; Vol. 49, No. 5 PART 3. pp. 05FA101-05FA105.
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Plasma-enhanced atomic layer deposition of cobalt using cyclopentadienyl isopropyl acetamidinato-cobalt as a precursor. / Kim, Jae Min; Lee, Han Bo Ram; Lansalot, Clement; Dussarrat, Christian; Gatineau, Julien; Kim, Hyungjun.

In: Japanese journal of applied physics, Vol. 49, No. 5 PART 3, 01.05.2010, p. 05FA101-05FA105.

Research output: Contribution to journalArticle

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T1 - Plasma-enhanced atomic layer deposition of cobalt using cyclopentadienyl isopropyl acetamidinato-cobalt as a precursor

AU - Kim, Jae Min

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AB - Cobalt plasma-enhanced atomic layer deposition (PE-ALD) using cyclopentadienyl isopropyl acetamidinato-cobalt [Co(CpAMD)] precursor and NH3 plasma was investigated. The PE-ALD Co thin films were produced well on both SiO2 and Si(001) substrates. The deposition characteristics and films properties such as resistivity, chemical bonding states and quantitative impurity level contents were investigated. Especially, Co deposition using this precursor was possible at very low growth temperature as low as 100 °C, which enable the deposition on polymer-based substrate. We demonstrate that this low growth temperature PE-ALD can be applicable to patterning of Co film by lift-off method, which was realized by direct deposition of Co on photoresist patterned substrate.

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