Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor

Donghyuk Shin, Heungseop Song, Minhyeong Lee, Heungsoo Park, Dae Hong Ko

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Silicon dioxide (SiO2) films were deposited on Si (100) substrates with plasma-enhanced atomic layer deposition (PE-ALD) technique at 50, 100, and 200 °C, using di-isopropylaminosilane as a silicon source and oxygen (O2) plasma as an oxident. Self-limiting growth was confirmed with saturated growth-per-cycle (GPC) of ~1.7 Å at a constant O2 plasma time of 1.0 s while the GPC of the PE-ALD SiO2 film decreased with the O2 plasma time at a low temperature of 50 °C. In our experiment, the highest GPC of ~2.0 Å was achieved when the O2 plasma time was 0.3 s. Along the change of deposition temperature, an activation energy for thermal dehydroxylation was estimated from the gradient of the Arrhenius plot. Also, film properties were investigated with varying O2 plasma time. PE-ALD SiO2 film exhibited a disparity in wet etch rate and stoichiometric composition dependent on the in-cycle O2 plasma time. According to our experimental results, PE-ALD SiO2 film at a low temperature of 50 °C, presented high GPC and refractive index value of typical SiO2 film compared to thermal ALD SiO2.

Original languageEnglish
Pages (from-to)572-577
Number of pages6
JournalThin Solid Films
Volume660
DOIs
Publication statusPublished - 2018 Aug 30

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Silicon Dioxide
Silica
silicon dioxide
Plasmas
cycles
Temperature
Arrhenius plots
oxygen plasma
Silicon
plots
Refractive index
refractivity
Activation energy
activation energy
gradients
Oxygen
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Shin, Donghyuk ; Song, Heungseop ; Lee, Minhyeong ; Park, Heungsoo ; Ko, Dae Hong. / Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor. In: Thin Solid Films. 2018 ; Vol. 660. pp. 572-577.
@article{4503ec068b3847b98ee460a86ba6d552,
title = "Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor",
abstract = "Silicon dioxide (SiO2) films were deposited on Si (100) substrates with plasma-enhanced atomic layer deposition (PE-ALD) technique at 50, 100, and 200 °C, using di-isopropylaminosilane as a silicon source and oxygen (O2) plasma as an oxident. Self-limiting growth was confirmed with saturated growth-per-cycle (GPC) of ~1.7 {\AA} at a constant O2 plasma time of 1.0 s while the GPC of the PE-ALD SiO2 film decreased with the O2 plasma time at a low temperature of 50 °C. In our experiment, the highest GPC of ~2.0 {\AA} was achieved when the O2 plasma time was 0.3 s. Along the change of deposition temperature, an activation energy for thermal dehydroxylation was estimated from the gradient of the Arrhenius plot. Also, film properties were investigated with varying O2 plasma time. PE-ALD SiO2 film exhibited a disparity in wet etch rate and stoichiometric composition dependent on the in-cycle O2 plasma time. According to our experimental results, PE-ALD SiO2 film at a low temperature of 50 °C, presented high GPC and refractive index value of typical SiO2 film compared to thermal ALD SiO2.",
author = "Donghyuk Shin and Heungseop Song and Minhyeong Lee and Heungsoo Park and Ko, {Dae Hong}",
year = "2018",
month = "8",
day = "30",
doi = "10.1016/j.tsf.2018.05.033",
language = "English",
volume = "660",
pages = "572--577",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor. / Shin, Donghyuk; Song, Heungseop; Lee, Minhyeong; Park, Heungsoo; Ko, Dae Hong.

In: Thin Solid Films, Vol. 660, 30.08.2018, p. 572-577.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor

AU - Shin, Donghyuk

AU - Song, Heungseop

AU - Lee, Minhyeong

AU - Park, Heungsoo

AU - Ko, Dae Hong

PY - 2018/8/30

Y1 - 2018/8/30

N2 - Silicon dioxide (SiO2) films were deposited on Si (100) substrates with plasma-enhanced atomic layer deposition (PE-ALD) technique at 50, 100, and 200 °C, using di-isopropylaminosilane as a silicon source and oxygen (O2) plasma as an oxident. Self-limiting growth was confirmed with saturated growth-per-cycle (GPC) of ~1.7 Å at a constant O2 plasma time of 1.0 s while the GPC of the PE-ALD SiO2 film decreased with the O2 plasma time at a low temperature of 50 °C. In our experiment, the highest GPC of ~2.0 Å was achieved when the O2 plasma time was 0.3 s. Along the change of deposition temperature, an activation energy for thermal dehydroxylation was estimated from the gradient of the Arrhenius plot. Also, film properties were investigated with varying O2 plasma time. PE-ALD SiO2 film exhibited a disparity in wet etch rate and stoichiometric composition dependent on the in-cycle O2 plasma time. According to our experimental results, PE-ALD SiO2 film at a low temperature of 50 °C, presented high GPC and refractive index value of typical SiO2 film compared to thermal ALD SiO2.

AB - Silicon dioxide (SiO2) films were deposited on Si (100) substrates with plasma-enhanced atomic layer deposition (PE-ALD) technique at 50, 100, and 200 °C, using di-isopropylaminosilane as a silicon source and oxygen (O2) plasma as an oxident. Self-limiting growth was confirmed with saturated growth-per-cycle (GPC) of ~1.7 Å at a constant O2 plasma time of 1.0 s while the GPC of the PE-ALD SiO2 film decreased with the O2 plasma time at a low temperature of 50 °C. In our experiment, the highest GPC of ~2.0 Å was achieved when the O2 plasma time was 0.3 s. Along the change of deposition temperature, an activation energy for thermal dehydroxylation was estimated from the gradient of the Arrhenius plot. Also, film properties were investigated with varying O2 plasma time. PE-ALD SiO2 film exhibited a disparity in wet etch rate and stoichiometric composition dependent on the in-cycle O2 plasma time. According to our experimental results, PE-ALD SiO2 film at a low temperature of 50 °C, presented high GPC and refractive index value of typical SiO2 film compared to thermal ALD SiO2.

UR - http://www.scopus.com/inward/record.url?scp=85047349560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047349560&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.05.033

DO - 10.1016/j.tsf.2018.05.033

M3 - Article

VL - 660

SP - 572

EP - 577

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -