Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

Jeong Gyu Song, Jusang Park, Jaehong Yoon, Hwangje Woo, Kyungyong Ko, Taeyoon Lee, Sung Hwan Hwang, Jae Min Myoung, Keewon Kim, Youngman Jang, Kwangseok Kim, Hyungjun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.

Original languageEnglish
Pages (from-to)307-311
Number of pages5
JournalJournal of Luminescence
Volume145
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Magnesium Oxide
Nanowires
magnesium oxides
Atomic layer deposition
atomic layer epitaxy
Passivation
passivity
Photoluminescence
nanowires
photoluminescence
Plasmas
Oxide films
Hot Temperature
Luminescence
Thin films
Growth
thin films
luminescence
Photoemission
Transmission Electron Microscopy

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Song, Jeong Gyu ; Park, Jusang ; Yoon, Jaehong ; Woo, Hwangje ; Ko, Kyungyong ; Lee, Taeyoon ; Hwang, Sung Hwan ; Myoung, Jae Min ; Kim, Keewon ; Jang, Youngman ; Kim, Kwangseok ; Kim, Hyungjun. / Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires. In: Journal of Luminescence. 2014 ; Vol. 145. pp. 307-311.
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Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires. / Song, Jeong Gyu; Park, Jusang; Yoon, Jaehong; Woo, Hwangje; Ko, Kyungyong; Lee, Taeyoon; Hwang, Sung Hwan; Myoung, Jae Min; Kim, Keewon; Jang, Youngman; Kim, Kwangseok; Kim, Hyungjun.

In: Journal of Luminescence, Vol. 145, 01.01.2014, p. 307-311.

Research output: Contribution to journalArticle

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AU - Song, Jeong Gyu

AU - Park, Jusang

AU - Yoon, Jaehong

AU - Woo, Hwangje

AU - Ko, Kyungyong

AU - Lee, Taeyoon

AU - Hwang, Sung Hwan

AU - Myoung, Jae Min

AU - Kim, Keewon

AU - Jang, Youngman

AU - Kim, Kwangseok

AU - Kim, Hyungjun

PY - 2014/1/1

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N2 - The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.

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