Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

Jeong Gyu Song; Jusang Park; Jaehong Yoon; Hwangje Woo; Kyungyong Ko; Taeyoon Lee; Sung Hwan Hwang; Jae Min Myoung; Keewon Kim; Youngman Jang; Kwangseok Kim; Hyungjun Kim

doi:10.1016/j.jlumin.2013.07.076

Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

Jeong Gyu Song, Jusang Park, Jaehong Yoon, Hwangje Woo, Kyungyong Ko, Taeyoon Lee, Sung Hwan Hwang, Jae Min Myoung, Keewon Kim, Youngman Jang, Kwangseok Kim, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.

Original language	English
Pages (from-to)	307-311
Number of pages	5
Journal	Journal of Luminescence
Volume	145
DOIs	https://doi.org/10.1016/j.jlumin.2013.07.076
Publication status	Published - 2014

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic technology development program ( 10041926 , development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) .

All Science Journal Classification (ASJC) codes

Biophysics
Biochemistry
Chemistry(all)
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.jlumin.2013.07.076

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title = "Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires",

abstract = "The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.",

author = "Song, {Jeong Gyu} and Jusang Park and Jaehong Yoon and Hwangje Woo and Kyungyong Ko and Taeyoon Lee and Hwang, {Sung Hwan} and Myoung, {Jae Min} and Keewon Kim and Youngman Jang and Kwangseok Kim and Hyungjun Kim",

note = "Funding Information: This work was supported by the Industrial Strategic technology development program ( 10041926 , development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) .",

year = "2014",

doi = "10.1016/j.jlumin.2013.07.076",

language = "English",

volume = "145",

pages = "307--311",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

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TY - JOUR

T1 - Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

AU - Song, Jeong Gyu

AU - Park, Jusang

AU - Yoon, Jaehong

AU - Woo, Hwangje

AU - Ko, Kyungyong

AU - Lee, Taeyoon

AU - Hwang, Sung Hwan

AU - Myoung, Jae Min

AU - Kim, Keewon

AU - Jang, Youngman

AU - Kim, Kwangseok

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Industrial Strategic technology development program ( 10041926 , development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) .

PY - 2014

Y1 - 2014

N2 - The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.

AB - The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.

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DO - 10.1016/j.jlumin.2013.07.076

M3 - Article

AN - SCOPUS:84883168954

SN - 0022-2313

VL - 145

SP - 307

EP - 311

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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