Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

Jeong Gyu Song, Jusang Park, Jaehong Yoon, Hwangje Woo, Kyungyong Ko, Taeyoon Lee, Sung Hwan Hwang, Jae Min Myoung, Keewon Kim, Youngman Jang, Kwangseok Kim, Hyungjun Kim

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The growth characteristics and film properties of magnesium oxide (MgO) thin films fabricated by plasma enhanced atomic layer deposition (PE-ALD) and thermal ALD (Th-ALD) were comparatively investigated for passivation layer applications. For both processes, well-saturated growth characteristics were observed, with a higher saturated growth rate for Th-ALD. X-ray photoemission analysis showed that very high purity MgO film with virtually no carbon contamination was deposited by PE-ALD. X-ray diffraction and transmission electron microscopy analysis showed that the PE-ALD MgO thin films had a larger grain size than the Th-ALD MgO thin films and were predominantly (1 1 1) crystal orientation. The photoluminescence analysis showed enhanced luminescence properties of the ALD MgO shell/ZnO nanowires. In particular, PE-ALD MgO showed greater enhancement of the luminescence properties than Th-ALD MgO.

Original languageEnglish
Pages (from-to)307-311
Number of pages5
JournalJournal of Luminescence
Publication statusPublished - 2014 Jan 1


All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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