Plasma-enhanced atomic layer deposition of Ni

Han Bo Ram Lee, Sung Hwan Bang, Woo Hoo Kim, Gil Ho Gu, Young Kuk Lee, Taek Mo Chung, Chang Gyoun Kim, Chan Gyung Park, Hyungjun Kim

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15 Citations (Scopus)

Abstract

Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.

Original languageEnglish
Pages (from-to)05FA111-05FA114
JournalJapanese journal of applied physics
Volume49
Issue number5 PART 3
DOIs
Publication statusPublished - 2010 May 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Lee, H. B. R., Bang, S. H., Kim, W. H., Gu, G. H., Lee, Y. K., Chung, T. M., Kim, C. G., Park, C. G., & Kim, H. (2010). Plasma-enhanced atomic layer deposition of Ni. Japanese journal of applied physics, 49(5 PART 3), 05FA111-05FA114. https://doi.org/10.1143/JJAP.49.05FA11