Abstract
Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.
| Original language | English |
|---|---|
| Pages (from-to) | 05FA111-05FA114 |
| Journal | Japanese journal of applied physics |
| Volume | 49 |
| Issue number | 5 PART 3 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Plasma-enhanced atomic layer deposition of Ni. / Lee, Han Bo Ram; Bang, Sung Hwan; Kim, Woo Hoo; Gu, Gil Ho; Lee, Young Kuk; Chung, Taek Mo; Kim, Chang Gyoun; Park, Chan Gyung; Kim, Hyungjun.
In: Japanese journal of applied physics, Vol. 49, No. 5 PART 3, 01.05.2010, p. 05FA111-05FA114.Research output: Contribution to journal › Article
TY - JOUR
T1 - Plasma-enhanced atomic layer deposition of Ni
AU - Lee, Han Bo Ram
AU - Bang, Sung Hwan
AU - Kim, Woo Hoo
AU - Gu, Gil Ho
AU - Lee, Young Kuk
AU - Chung, Taek Mo
AU - Kim, Chang Gyoun
AU - Park, Chan Gyung
AU - Kim, Hyungjun
PY - 2010/5/1
Y1 - 2010/5/1
N2 - Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.
AB - Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.
UR - http://www.scopus.com/inward/record.url?scp=77953223457&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953223457&partnerID=8YFLogxK
U2 - 10.1143/JJAP.49.05FA11
DO - 10.1143/JJAP.49.05FA11
M3 - Article
AN - SCOPUS:77953223457
VL - 49
SP - 05FA111-05FA114
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 5 PART 3
ER -