Plasma-enhanced atomic layer deposition of Ni

Han Bo Ram Lee; Sung Hwan Bang; Woo Hoo Kim; Gil Ho Gu; Young Kuk Lee; Taek Mo Chung; Chang Gyoun Kim; Chan Gyung Park; Hyungjun Kim

doi:10.1143/JJAP.49.05FA11

Plasma-enhanced atomic layer deposition of Ni

Han Bo Ram Lee, Sung Hwan Bang, Woo Hoo Kim, Gil Ho Gu, Young Kuk Lee, Taek Mo Chung, Chang Gyoun Kim, Chan Gyung Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)₂] as a precursor and NH₃ or H₂ plasma as a reactant was comparatively investigated. PE-ALD Ni using NH₃ plasma showed higher growth rate, lower resistivity, and lower C content than that using H ₂ plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH₃ plasma was clearly different with that using H₂, probably due to the effects of NH_x radicals.

Original language	English
Pages (from-to)	05FA111-05FA114
Journal	Japanese journal of applied physics
Volume	49
Issue number	5 PART 3
DOIs	https://doi.org/10.1143/JJAP.49.05FA11
Publication status	Published - 2010 May 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Lee, H. B. R., Bang, S. H., Kim, W. H., Gu, G. H., Lee, Y. K., Chung, T. M., Kim, C. G., Park, C. G., & Kim, H. (2010). Plasma-enhanced atomic layer deposition of Ni. Japanese journal of applied physics, 49(5 PART 3), 05FA111-05FA114. https://doi.org/10.1143/JJAP.49.05FA11

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title = "Plasma-enhanced atomic layer deposition of Ni",

abstract = "Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.",

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AU - Lee, Han Bo Ram

AU - Bang, Sung Hwan

AU - Kim, Woo Hoo

AU - Gu, Gil Ho

AU - Lee, Young Kuk

AU - Chung, Taek Mo

AU - Kim, Chang Gyoun

AU - Park, Chan Gyung

AU - Kim, Hyungjun

PY - 2010/5/1

Y1 - 2010/5/1

N2 - Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.

AB - Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.

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