Plasma-enhanced atomic layer deposition of Ni

Han Bo Ram Lee, Sung Hwan Bang, Woo Hoo Kim, Gil Ho Gu, Young Kuk Lee, Taek Mo Chung, Chang Gyoun Kim, Chan Gyung Park, Hyungjun Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.

Original languageEnglish
Pages (from-to)05FA111-05FA114
JournalJapanese journal of applied physics
Volume49
Issue number5 PART 3
DOIs
Publication statusPublished - 2010 May 1

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Plasmas
Electron energy loss spectroscopy
X ray photoelectron spectroscopy
energy dissipation
Nickel
photoelectron spectroscopy
nickel
electron energy
chemistry
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
electrical resistivity
scanning electron microscopy
spectroscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, H. B. R., Bang, S. H., Kim, W. H., Gu, G. H., Lee, Y. K., Chung, T. M., ... Kim, H. (2010). Plasma-enhanced atomic layer deposition of Ni. Japanese journal of applied physics, 49(5 PART 3), 05FA111-05FA114. https://doi.org/10.1143/JJAP.49.05FA11
Lee, Han Bo Ram ; Bang, Sung Hwan ; Kim, Woo Hoo ; Gu, Gil Ho ; Lee, Young Kuk ; Chung, Taek Mo ; Kim, Chang Gyoun ; Park, Chan Gyung ; Kim, Hyungjun. / Plasma-enhanced atomic layer deposition of Ni. In: Japanese journal of applied physics. 2010 ; Vol. 49, No. 5 PART 3. pp. 05FA111-05FA114.
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Lee, HBR, Bang, SH, Kim, WH, Gu, GH, Lee, YK, Chung, TM, Kim, CG, Park, CG & Kim, H 2010, 'Plasma-enhanced atomic layer deposition of Ni', Japanese journal of applied physics, vol. 49, no. 5 PART 3, pp. 05FA111-05FA114. https://doi.org/10.1143/JJAP.49.05FA11

Plasma-enhanced atomic layer deposition of Ni. / Lee, Han Bo Ram; Bang, Sung Hwan; Kim, Woo Hoo; Gu, Gil Ho; Lee, Young Kuk; Chung, Taek Mo; Kim, Chang Gyoun; Park, Chan Gyung; Kim, Hyungjun.

In: Japanese journal of applied physics, Vol. 49, No. 5 PART 3, 01.05.2010, p. 05FA111-05FA114.

Research output: Contribution to journalArticle

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AU - Lee, Han Bo Ram

AU - Bang, Sung Hwan

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AU - Gu, Gil Ho

AU - Lee, Young Kuk

AU - Chung, Taek Mo

AU - Kim, Chang Gyoun

AU - Park, Chan Gyung

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AB - Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.

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Lee HBR, Bang SH, Kim WH, Gu GH, Lee YK, Chung TM et al. Plasma-enhanced atomic layer deposition of Ni. Japanese journal of applied physics. 2010 May 1;49(5 PART 3):05FA111-05FA114. https://doi.org/10.1143/JJAP.49.05FA11