Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics

Jae Won Na, Hee Jun Kim, Seonghwan Hong, Hyun Jae Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.

Original languageEnglish
Pages (from-to)37207-37215
Number of pages9
JournalACS Applied Materials and Interfaces
Volume10
Issue number43
DOIs
Publication statusPublished - 2018 Oct 31

Fingerprint

Zinc Oxide
Plasma polymerization
Gallium
Indium
Polytetrafluoroethylene
Zinc oxide
Polytetrafluoroethylenes
Oxides
Polymers
Metals
Semiconductor materials
Fabrication
Thin film transistors
Threshold voltage
Magnetron sputtering
Oxide films
Wearable technology
Moisture
Lighting

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics",
abstract = "A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.",
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Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics. / Na, Jae Won; Kim, Hee Jun; Hong, Seonghwan; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 43, 31.10.2018, p. 37207-37215.

Research output: Contribution to journalArticle

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