Abstract
A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.
| Original language | English |
|---|---|
| Pages (from-to) | 37207-37215 |
| Number of pages | 9 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 10 |
| Issue number | 43 |
| DOIs | |
| Publication status | Published - 2018 Oct 31 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics. / Na, Jae Won; Kim, Hee Jun; Hong, Seonghwan; Kim, Hyun Jae.
In: ACS Applied Materials and Interfaces, Vol. 10, No. 43, 31.10.2018, p. 37207-37215.Research output: Contribution to journal › Article
TY - JOUR
T1 - Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics
AU - Na, Jae Won
AU - Kim, Hee Jun
AU - Hong, Seonghwan
AU - Kim, Hyun Jae
PY - 2018/10/31
Y1 - 2018/10/31
N2 - A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.
AB - A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.
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U2 - 10.1021/acsami.8b11094
DO - 10.1021/acsami.8b11094
M3 - Article
C2 - 30338976
AN - SCOPUS:85056119146
VL - 10
SP - 37207
EP - 37215
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 43
ER -