Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics

Jae Won Na; Hee Jun Kim; Seonghwan Hong; Hyun Jae Kim

doi:10.1021/acsami.8b11094

Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics

Jae Won Na, Hee Jun Kim, Seonghwan Hong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm² V^-1 s^-1, a subthreshold swing of 0.38 V dec^-1, and an on/off ratio of 1.08 × 10⁸. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (V_th) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.

Original language	English
Pages (from-to)	37207-37215
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	43
DOIs	https://doi.org/10.1021/acsami.8b11094
Publication status	Published - 2018 Oct 31

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

Publisher Copyright:
© 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.8b11094

Cite this

@article{80b713c068e7463d9fe57db49b8792a8,

title = "Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics",

abstract = "A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.",

author = "Na, {Jae Won} and Kim, {Hee Jun} and Seonghwan Hong and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = oct,

day = "31",

doi = "10.1021/acsami.8b11094",

language = "English",

volume = "10",

pages = "37207--37215",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "43",

}

TY - JOUR

T1 - Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics

AU - Na, Jae Won

AU - Kim, Hee Jun

AU - Hong, Seonghwan

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/10/31

Y1 - 2018/10/31

N2 - A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.

AB - A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.

UR - http://www.scopus.com/inward/record.url?scp=85056119146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056119146&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b11094

DO - 10.1021/acsami.8b11094

M3 - Article

C2 - 30338976

AN - SCOPUS:85056119146

VL - 10

SP - 37207

EP - 37215

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 43

ER -

Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this