Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics

Jae Won Na, Hee Jun Kim, Seonghwan Hong, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)


A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage (Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.

Original languageEnglish
Pages (from-to)37207-37215
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number43
Publication statusPublished - 2018 Oct 31

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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