Platinum-assisted vapor-liquid-solid growth of GaN nanowires and their properties

Eunsoon Oh; Byoung Woo Lee; Sojung Shim; Ki Young Lee; Hwangyou Oh; Heon Jin Choi; Byung Hee Son; Yeong Hwan Ahn; Le Si Dang

doi:10.3938/jkps.56.100

Platinum-assisted vapor-liquid-solid growth of GaN nanowires and their properties

Eunsoon Oh, Byoung Woo Lee, Sojung Shim, Ki Young Lee, Hwangyou Oh, Heon Jin Choi, Byung Hee Son, Yeong Hwan Ahn, Le Si Dang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Growth of GaN nanowires by using a vapor-liquid-solid (VLS) mechanism with Pt catalysts was investigated. Single-crystal GaN nanowires with diameters of ∼100 nm and lengths of ∼5 μm were grown with Pt and with the well-known VLS catalyst of Ni. The growth rate of nanowires with Pt was lower than that with Ni under identical processing conditions. Pt-Ga alloy globules were observed by Transmission electron microscopy at the ends of the nanowires which lead the growth by the VLS mechanism. Electrical data from individual nanowires indicated high conductivity associated with high electron concentration in the Pt-GaN nanowires.

Original language	English
Pages (from-to)	100-103
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	1
DOIs	https://doi.org/10.3938/jkps.56.100
Publication status	Published - 2010 Jan 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.3938/jkps.56.100

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abstract = "Growth of GaN nanowires by using a vapor-liquid-solid (VLS) mechanism with Pt catalysts was investigated. Single-crystal GaN nanowires with diameters of ∼100 nm and lengths of ∼5 μm were grown with Pt and with the well-known VLS catalyst of Ni. The growth rate of nanowires with Pt was lower than that with Ni under identical processing conditions. Pt-Ga alloy globules were observed by Transmission electron microscopy at the ends of the nanowires which lead the growth by the VLS mechanism. Electrical data from individual nanowires indicated high conductivity associated with high electron concentration in the Pt-GaN nanowires.",

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AU - Oh, Eunsoon

AU - Lee, Byoung Woo

AU - Shim, Sojung

AU - Lee, Ki Young

AU - Oh, Hwangyou

AU - Choi, Heon Jin

AU - Son, Byung Hee

AU - Ahn, Yeong Hwan

AU - Dang, Le Si

PY - 2010/1/15

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N2 - Growth of GaN nanowires by using a vapor-liquid-solid (VLS) mechanism with Pt catalysts was investigated. Single-crystal GaN nanowires with diameters of ∼100 nm and lengths of ∼5 μm were grown with Pt and with the well-known VLS catalyst of Ni. The growth rate of nanowires with Pt was lower than that with Ni under identical processing conditions. Pt-Ga alloy globules were observed by Transmission electron microscopy at the ends of the nanowires which lead the growth by the VLS mechanism. Electrical data from individual nanowires indicated high conductivity associated with high electron concentration in the Pt-GaN nanowires.

AB - Growth of GaN nanowires by using a vapor-liquid-solid (VLS) mechanism with Pt catalysts was investigated. Single-crystal GaN nanowires with diameters of ∼100 nm and lengths of ∼5 μm were grown with Pt and with the well-known VLS catalyst of Ni. The growth rate of nanowires with Pt was lower than that with Ni under identical processing conditions. Pt-Ga alloy globules were observed by Transmission electron microscopy at the ends of the nanowires which lead the growth by the VLS mechanism. Electrical data from individual nanowires indicated high conductivity associated with high electron concentration in the Pt-GaN nanowires.

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Platinum-assisted vapor-liquid-solid growth of GaN nanowires and their properties

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