Platinum-assisted vapor-liquid-solid growth of GaN nanowires and their properties

Eunsoon Oh, Byoung Woo Lee, Sojung Shim, Ki Young Lee, Hwangyou Oh, Heon Jin Choi, Byung Hee Son, Yeong Hwan Ahn, Le Si Dang

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Abstract

Growth of GaN nanowires by using a vapor-liquid-solid (VLS) mechanism with Pt catalysts was investigated. Single-crystal GaN nanowires with diameters of ∼100 nm and lengths of ∼5 μm were grown with Pt and with the well-known VLS catalyst of Ni. The growth rate of nanowires with Pt was lower than that with Ni under identical processing conditions. Pt-Ga alloy globules were observed by Transmission electron microscopy at the ends of the nanowires which lead the growth by the VLS mechanism. Electrical data from individual nanowires indicated high conductivity associated with high electron concentration in the Pt-GaN nanowires.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalJournal of the Korean Physical Society
Volume56
Issue number1
DOIs
Publication statusPublished - 2010 Jan 15

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Oh, E., Lee, B. W., Shim, S., Lee, K. Y., Oh, H., Choi, H. J., Son, B. H., Ahn, Y. H., & Dang, L. S. (2010). Platinum-assisted vapor-liquid-solid growth of GaN nanowires and their properties. Journal of the Korean Physical Society, 56(1), 100-103. https://doi.org/10.3938/jkps.56.100